GT60M323(Q) Toshiba, GT60M323(Q) Datasheet

GT60M323(Q)

Manufacturer Part Number

GT60M323(Q)

Description

IGBT 900V DUAL 60A TO-3P LH

Manufacturer

Toshiba

Datasheet

1.GT60M323Q.pdf (6 pages)

Specifications of GT60M323(Q)

Voltage - Collector Emitter Breakdown (max)

900V

Vce(on) (max) @ Vge, Ic

2.8V @ 15V, 60A

Current - Collector (ic) (max)

60A

Power - Max

200W

Input Type

Standard

Mounting Type

Through Hole

Package / Case

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Igbt Type

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Voltage Resonance Inverter Switching Application

•

Absolute Maximum Ratings

Thermal Characteristics

Equivalent Circuit

Enhancement mode type

High speed

Low saturation voltage : V

FRD included between emitter and collector

TO-3P(LH) (Toshiba package name)

Collector-emitter voltage

Gate-emitter voltage

Continuous collector

current

Pulsed collector current

Diode forward current

Collector power

dissipation

Junction temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

Thermal resistance (IGBT)

Thermal resistance (diode)

Gate

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Characteristics

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

Collector

Emitter

@ Tc = 100°C

@ Tc = 25°C

Pulsed

@ Tc = 100°C

@ Tc = 25°C

: t

CE (sat)

= 0.09 μs (typ.) (I

= 2.3 V (typ.) (I

(Ta = 25°C)

Symbol

GT60M323

th (j-c)

GES

CES

stg

= 60 A)

−55 to 150

Marking

Rating

0.625

= 60 A)

Max

900

±25

120

200

150

4.0

°C/W

Unit

°C

GT60M323

TOSHIBA

JAPAN

Weight: 9.75 g (typ.)

JEDEC

JEITA

TOSHIBA

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2-21F2C

GT60M323

2006-11-01

―

Unit: mm

Related parts for GT60M323(Q)

GT60M323(Q) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Diode forward voltage Reverse recovery time Note 1: Switching time measurement circuit and ...

Page 3

I – 120 10 Common 9 emitter 15 8 100 Tc = -40° Collector-emitter voltage V CE (V) I – ...

Page 4

– 200 Common emitter 2.5 Ω 25°C 150 100 150 V 50 100 120 180 Gate charge Q G (nC) Switching ...

Page 5

I max – Common emitter 100 125 Tc Case temperature (°C) I – 100 Common collector ...

Page 6

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...

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