BUP314D Infineon Technologies, BUP314D Datasheet
BUP314D
Specifications of BUP314D
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BUP314D Summary of contents
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Infineon IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 314D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage R = ...
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Infineon Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Electrical Characteristics Parameter Static Characteristics Gate threshold voltage ...
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Infineon Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 ...
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Infineon Power dissipation tot C parameter: T 150 °C j 320 W P tot 240 200 160 120 Safe operating area ...
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Infineon Typ. output characteristics parameter µ ° 17V 15V 40 I 13V C 11V ...
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Infineon Typ. switching time inductive load , par 600 ± ...
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Infineon Typ. gate charge Gate parameter puls 600 Short circuit ...
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Infineon Typ. forward characteristics parameter =125° 0.0 0.5 1.0 1.5 Semiconductor Group Transient thermal impedance ...
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Infineon Package Outlines Dimensions in mm Weight: Semiconductor Group 9 BUP 314D Jul-30-1996 ...