JFET SS P-CHAN 25V SOT23

MMBFJ177LT1G

Manufacturer Part NumberMMBFJ177LT1G
DescriptionJFET SS P-CHAN 25V SOT23
ManufacturerON Semiconductor
MMBFJ177LT1G datasheet
 


Specifications of MMBFJ177LT1G

Current - Drain (idss) @ Vds (vgs=0)1.5mA @ 15VFet TypeP-Channel
Voltage - Breakdown (v(br)gss)30VVoltage - Cutoff (vgs Off) @ Id800mV @ 10nA
Input Capacitance (ciss) @ Vds11pF @ 10V (VGS)Resistance - Rds(on)300 Ohm
Mounting TypeSurface MountPackage / CaseTO-236-3, SC-59, SOT-23-3
Power - Max225mWConfigurationSingle
Transistor PolarityP-ChannelGate-source Breakdown Voltage- 25 V
Drain Current (idss At Vgs=0)1.5 mA to 20 mAMaximum Operating Temperature+ 150 C
Maximum Drain Gate Voltage25 VMinimum Operating Temperature- 55 C
Mounting StyleSMD/SMTBreakdown Voltage Vbr30V
Gate-source Cutoff Voltage Vgs(off) Max2.5VPower Dissipation Pd225mW
Operating Temperature Range-55°C To +150°CNo. Of Pins3
Filter TerminalsSMDRohs CompliantYes
Continuous Drain Current Id20mAZero Gate Voltage Drain Current Idss-1.5mA To -20mA
Transistor TypeJFETLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesMMBFJ177LT1GOS
MMBFJ177LT1GOS
MMBFJ177LT1GOSTR
  
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MMBFJ177LT1G
JFET Chopper
P−Channel − Depletion
Features
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Drain−Gate Voltage
Reverse Gate−Source Voltage
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Total Device Dissipation FR− 5 Board
(Note 1)
T
= 25°C
A
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0  0.75  0.062 in.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 4
Symbol
Value
Unit
V
25
Vdc
DG
V
−25
Vdc
GS(r)
P
225
mW
D
1.8
mW/°C
R
556
°C/W
qJA
T
, T
−55 to +150
°C
J
stg
1
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
3
SOT−23 (TO−236AB)
CASE 318−08
1
STYLE 10
2
MARKING DIAGRAM
6Y MG
G
1
6Y = Specific Device Code
M
= Date Code*
= Pb−Free Package
G
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBFJ177LT1G
SOT−23
3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMBFJ177LT1/D

MMBFJ177LT1G Summary of contents

  • Page 1

    ... Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBFJ177LT1G SOT−23 3000 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

  • Page 2

    ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage ( Gate Reverse Current ( Vdc Gate Source Cutoff Voltage ( Vdc CHARACTERISTICS Zero−Gate−Voltage Drain Current (V GS ...

  • Page 3

    ... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...