MMBFJ177LT1G ON Semiconductor, MMBFJ177LT1G Datasheet

JFET SS P-CHAN 25V SOT23

MMBFJ177LT1G

Manufacturer Part Number
MMBFJ177LT1G
Description
JFET SS P-CHAN 25V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBFJ177LT1G

Current - Drain (idss) @ Vds (vgs=0)
1.5mA @ 15V
Fet Type
P-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
800mV @ 10nA
Input Capacitance (ciss) @ Vds
11pF @ 10V (VGS)
Resistance - Rds(on)
300 Ohm
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Power - Max
225mW
Configuration
Single
Transistor Polarity
P-Channel
Gate-source Breakdown Voltage
- 25 V
Drain Current (idss At Vgs=0)
1.5 mA to 20 mA
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
25 V
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Breakdown Voltage Vbr
30V
Gate-source Cutoff Voltage Vgs(off) Max
2.5V
Power Dissipation Pd
225mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Filter Terminals
SMD
Rohs Compliant
Yes
Continuous Drain Current Id
20mA
Zero Gate Voltage Drain Current Idss
-1.5mA To -20mA
Transistor Type
JFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBFJ177LT1GOS
MMBFJ177LT1GOS
MMBFJ177LT1GOSTR

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MMBFJ177LT1G
JFET Chopper
P−Channel − Depletion
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 4
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Drain−Gate Voltage
Reverse Gate−Source Voltage
Total Device Dissipation FR− 5 Board
Thermal Resistance,
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1)
T
Derate above 25°C
Junction−to−Ambient
A
= 25°C
Rating
Symbol
T
V
R
V
J
GS(r)
P
, T
DG
qJA
D
stg
−55 to +150
Value
−25
225
556
1.8
25
1
mW/°C
°C/W
Unit
Vdc
Vdc
mW
°C
†For information on tape and reel specifications,
MMBFJ177LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Device
(Note: Microdot may be in either location)
1
ORDERING INFORMATION
2
6Y = Specific Device Code
M
G
GATE
MARKING DIAGRAM
3
http://onsemi.com
3
= Date Code*
= Pb−Free Package
1
(Pb−Free)
Package
SOT−23
6Y MG
SOT−23 (TO−236AB)
Publication Order Number:
G
CASE 318−08
1 DRAIN
2 SOURCE
STYLE 10
3000 Tape & Reel
MMBFJ177LT1/D
Shipping

Related parts for MMBFJ177LT1G

MMBFJ177LT1G Summary of contents

Page 1

... Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBFJ177LT1G SOT−23 3000 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage ( Gate Reverse Current ( Vdc Gate Source Cutoff Voltage ( Vdc CHARACTERISTICS Zero−Gate−Voltage Drain Current (V GS ...

Page 3

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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