MMBFJ177LT1G ON Semiconductor, MMBFJ177LT1G Datasheet - Page 2

JFET SS P-CHAN 25V SOT23

MMBFJ177LT1G

Manufacturer Part Number
MMBFJ177LT1G
Description
JFET SS P-CHAN 25V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBFJ177LT1G

Current - Drain (idss) @ Vds (vgs=0)
1.5mA @ 15V
Fet Type
P-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
800mV @ 10nA
Input Capacitance (ciss) @ Vds
11pF @ 10V (VGS)
Resistance - Rds(on)
300 Ohm
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Power - Max
225mW
Configuration
Single
Transistor Polarity
P-Channel
Gate-source Breakdown Voltage
- 25 V
Drain Current (idss At Vgs=0)
1.5 mA to 20 mA
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
25 V
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Breakdown Voltage Vbr
30V
Gate-source Cutoff Voltage Vgs(off) Max
2.5V
Power Dissipation Pd
225mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Filter Terminals
SMD
Rohs Compliant
Yes
Continuous Drain Current Id
20mA
Zero Gate Voltage Drain Current Idss
-1.5mA To -20mA
Transistor Type
JFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBFJ177LT1GOS
MMBFJ177LT1GOS
MMBFJ177LT1GOSTR

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2. Pulse Test: Pulse Width < 300 ms, Duty Cycle ≤ 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Gate−Source Breakdown Voltage (V
Gate Reverse Current (V
Gate Source Cutoff Voltage (V
Zero−Gate−Voltage Drain Current (V
Drain Cutoff Current (V
Drain Source On Resistance (I
Input Capacitance
Reverse Transfer Capacitance
DS
DS
= 15 Vdc, V
= 0 Vdc, V
DS
D
= 500 mAdc)
= 15 Vdc, I
Characteristic
DS
GS
GS
GS
= 0, I
= 0, V
(T
= 10 Vdc)
= 20 Vdc)
A
D
D
= 25°C unless otherwise noted)
DS
= 10 nAdc)
= 1.0 mAdc)
= 15 Vdc) (Note 2)
V
DS
http://onsemi.com
= 0, V
f = 1.0 MHz
GS
= 10 Vdc
2
V
Symbol
V
r
(BR)GSS
I
DS(on)
I
GS(off)
I
D(off)
C
C
GSS
DSS
rss
iss
Min
0.8
1.5
30
Max
300
1.0
2.5
1.0
5.5
20
11
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
pF
W

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