MMBFJ177LT1G ON Semiconductor, MMBFJ177LT1G Datasheet - Page 3

• Manufacturer Part Number: MMBFJ177LT1G
• Description: JFET SS P-CHAN 25V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBFJ177LT1G

• Current - Drain (idss) @ Vds (vgs=0): 1.5mA @ 15V
• Fet Type: P-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 800mV @ 10nA
• Input Capacitance (ciss) @ Vds: 11pF @ 10V (VGS)
• Resistance - Rds(on): 300 Ohm
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Power - Max: 225mW
• Configuration: Single
• Transistor Polarity: P-Channel
• Gate-source Breakdown Voltage: - 25 V
• Drain Current (idss At Vgs=0): 1.5 mA to 20 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 25 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Breakdown Voltage Vbr: 30V
• Gate-source Cutoff Voltage Vgs(off) Max: 2.5V
• Power Dissipation Pd: 225mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Continuous Drain Current Id: 20mA
• Zero Gate Voltage Drain Current Idss: -1.5mA To -20mA
• Transistor Type: JFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBFJ177LT1GOS; MMBFJ177LT1GOS; MMBFJ177LT1GOSTR

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A
A1
E
1
3
D
e
2
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
b
H
E
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SEE VIEW C
0.037
0.95
0.035
0.9
0.031
N. American Technical Support: 800−282−9855 Toll Free
Europe, Middle East and Africa Technical Support:
Japan Customer Focus Center
VIEW C
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
USA/Canada
Phone: [phone]
Phone: 81−3−5773−3850
0.8
L1
SOT−23 (TO−236AB)
L
http://onsemi.com
CASE 318−08
ISSUE AN
q
0.25
c
3
SCALE 10:1
0.037
0.95
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
Y14.5M, 1982.
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
STANDARD 318−08.
STYLE 10:
DIM
0.079
A1
H
L1
PIN 1. DRAIN
inches
A
D
E
b
c
e
L
2.0
E
mm
2. SOURCE
3. GATE
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MAX
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
1.11
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
MIN
MMBFJ177LT1/D
INCHES
0.040
0.002
0.018
0.005
0.051
0.075
0.008
0.021
0.094
NOM
0.114
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
MAX