PN4303 Fairchild Semiconductor, PN4303 Datasheet
PN4303
Manufacturer Part Number
PN4303
Description
JFET N-CHAN N-CH 30V TO-92
Manufacturer
Fairchild Semiconductor
Specifications of PN4303
Current - Drain (idss) @ Vds (vgs=0)
4mA @ 15V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
6V @ 1nA
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Power - Max
625mW
Configuration
Single
Transistor Polarity
N-Channel
Power Dissipation
625 mW
Gate-source Breakdown Voltage
- 30 V
Gate-source Cutoff Voltage
- 4 V
Drain Current (idss At Vgs=0)
4 mA to 10 mA
Forward Transconductance Gfs (max / Min)
0.002 S
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
30 V
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PN4303
Manufacturer:
FAIRCHILD
Quantity:
63 000
Part Number:
PN4303
Manufacturer:
NATIONAL
Quantity:
20 000
©2004 Fairchild Semiconductor Corporation
N-Channel General Purpose Amplifier
• This device is designed primarily for low level audio and general
• Sourced from process 52.
Absolute Maximum Ratings*
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Thermal Characteristics
V
V
I
T
Off Characteristics
V
I
V
On Characteristics
I
P
R
R
GF
GSS
DSS
purpose applications with high impedance signal sources.
Symbol
J
DG
GS
(BR)GSS
GS(off)
D
Symbol
, T
JC
JA
Symbol
STG
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain Current *
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Parameter
T
a
T
=25 C unless otherwise noted
a
=25 C unless otherwise noted
Parameter
T
a
=25 C unless otherwise noted
PN4303
I
V
V
V
G
GS
DS
DS
= -1.0 A, V
= -10V, V
= 20V, I
= -15V, V
Test Condition
D
DS
DS
= 1.0nA
GS
= 0
= 0
= 0
Max.
625
125
357
5.0
1. Drain 2. Source 3. Gate
1
-55 ~ 150
Ratings
-30
30
50
Min.
-30
4.0
TO-92
Max.
-1.0
-6.0
10
mW/ C
Units
mW
C/W
C/W
Units
mA
Rev. A, April 2004
V
V
C
Units
mA
nA
V
V
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PN4303 Summary of contents
Page 1
... On Characteristics I Zero-Gate Voltage Drain Current * DSS Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2004 Fairchild Semiconductor Corporation PN4303 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition -10V ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2004 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, April 2004 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...