2N5639_D26Z Fairchild Semiconductor, 2N5639_D26Z Datasheet
2N5639_D26Z
Manufacturer Part Number
2N5639_D26Z
Description
IC SWITCH N-CHAN 30V 50MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N5639.pdf
(3 pages)
Specifications of 2N5639_D26Z
Current - Drain (idss) @ Vds (vgs=0)
25mA @ 20V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
30V
Input Capacitance (ciss) @ Vds
10pF @ 12V (VGS)
Resistance - Rds(on)
60 Ohm
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Power - Max
350mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2003 Fairchild Semiconductor Corporation
N-Channel Switch
• This device is designed for low level analog switchng, sample and hold
• Sourced from process 51.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
* Pulse Test: Pulse Width
Thermal Characteristics
V
V
I
T
Off Characteristics
V
I
I
On Characteristics
I
r
Small Signal Characteristics
r
C
C
Switching Characteristics
t
t
t
t
P
R
R
GF
GSS
D(off)
DSS
d(on)
r
d(off)
f
Symbol
DS(on)
ds(on)
circuits and chopper stabilized amplifiers.
J
DG
GS
(BR)GSS
D
iss
rss
Symbol
, T
JC
JA
Symbol
STG
Gate-Source Breakdown Voltage
Gate Reverse Current
Drain Cutoff Leakage Current
Zero-Gate Voltage Drain Current *
Drain-Source On Resistance
Drain-Source On Resistance
Input Capacitance
Reverse Transfer Capacitance
Trun On Delay Time
Rise Time
Trun Off Delay Time
Fall Time
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
300 s, Duty Cycle
Parameter
1.0%
T
A
T
Parameter
=25 C unless otherwise noted
C
=25 C unless otherwise noted
T
Parameter
C
=25 C unless otherwise noted
2N5639
V
V
V
V
V
V
V
V
V
V
R
DS
GS
DS
DS
GS
DS
DS
DS
DD
GS(off)
G
= 50
= 0, I
= 12V, V
= 20V, I
= V
= 0, V
= 0V, V
= -15V, V
= 0V, I
= 10V, V
= -12, I
GS
Test Condition
G
GS
D
= 0, f = 1.0kHz
= -10 A
GS
GS
GS
= 1.0mA
GS(on)
= 12V, f = 1.0MHz
DS
= 12V, f = 1.0MHz
D(on)
= 0
= 15V
= 0
= 0
= 12mA
-55 ~ +150
1. Drain 2. Source 3. Gate
Value
1
-30
30
50
Min.
-30
25
Max.
350
125
357
2.8
Typ.
TO-92
Max.
-1.0
1.0
4.0
6.0
8.0
60
60
10
10
20
Units
mW/ C
mA
V
V
Units
C
mW
C/W
C/W
Rev. A, July 2003
Units
mA
nA
nA
pF
pF
ns
ns
ns
ns
V
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2N5639_D26Z Summary of contents
Page 1
... Fall Time f * Pulse Test: Pulse Width 300 s, Duty Cycle Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2003 Fairchild Semiconductor Corporation 2N5639 T =25 C unless otherwise noted C Parameter T =25 C unless otherwise noted C Test Condition - ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2003 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, July 2003 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...