2N5462

Manufacturer Part Number2N5462
DescriptionIC AMP GP P-CHAN 40V 10MA TO-92
ManufacturerFairchild Semiconductor
2N5462 datasheet
 

Specifications of 2N5462

Current - Drain (idss) @ Vds (vgs=0)4mA @ 15VFet TypeP-Channel
Voltage - Breakdown (v(br)gss)40VVoltage - Cutoff (vgs Off) @ Id1.8V @ 1µA
Input Capacitance (ciss) @ Vds7pF @ 15VMounting TypeThrough Hole
Package / CaseTO-92-3 (Standard Body), TO-226Power - Max350mW
ConfigurationSingleTransistor PolarityP-Channel
Power Dissipation350 mWGate-source Breakdown Voltage40 V
Drain Current (idss At Vgs=0)60 mA to 140 mAForward Transconductance Gfs (max / Min)0.002 S to 0.006 S
Maximum Operating Temperature+ 150 CMaximum Drain Gate Voltage- 40 V
Minimum Operating Temperature- 55 CMounting StyleThrough Hole
Breakdown Voltage Vbr40VGate-source Cutoff Voltage Vgs(off) Max9V
Power Dissipation Pd350mWOperating Temperature Range-55°C To +150°C
No. Of Pins3Current Rating10mA
Rohs CompliantYesTransistor TypeJFET
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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2N5460
2N5461
2N5462
TO-92
G
S
D
P-Channel General Purpose Amplifier
This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources. Sourced
from Process 89.
Absolute Maximum Ratings*
-
Symbol
V
Drain-Gate Voltage
DG
V
Gate-Source Voltage
GS
I
Forward Gate Current
GF
Operating and Storage Junction Temperature Range
T
,T
stg
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Characteristic
P
Total Device Dissipation
D
Derate above 25 C
Thermal Resistance, Junction to Case
R
JC
Thermal Resistance, Junction to Ambient
R
JA
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
MMBF5460
MMBF5461
MMBF5462
G
SOT-23
Mark: 6E / 61U / 61V
TA = 25°C unless otherwise noted
Parameter
TA = 25°C unless otherwise noted
2N5460-5462
350
2.8
125
357
S
D
NOTE: Source & Drain
are interchangeable
Value
Units
- 40
V
40
V
10
mA
-55 to +150
C
Max
Units
*MMBF5460-5462
225
mW
1.8
mW/ C
C/W
556
C/W
2N5460/5461/5462/MMBF5460/5461/5462, Rev A

2N5462 Summary of contents

  • Page 1

    ... TO- P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89. Absolute Maximum Ratings* - Symbol V Drain-Gate Voltage DG V Gate-Source Voltage GS I Forward Gate Current GF Operating and Storage Junction Temperature Range ...

  • Page 2

    Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Gate-Source Breakdown Voltage (BR)GSS I Gate Reverse Current GSS V Gate-Source Cutoff Voltage GS(off) V Gate-Source Voltage GS ON CHARACTERISTICS I Zero-Gate Voltage Drain Current* DSS SMALL SIGNAL CHARACTERISTICS Forward Transfer Conductance g ...

  • Page 3

    Typical Characteristics Transfer Characteristics Common Drain-Source Leakage Current vs. Voltage P-Channel General Purpose Amplifier (continued) Transfer Charactersitics Parameter Interactions Channel Resistance vs. (continued) Temperature ...

  • Page 4

    Typical Characteristics Output Conductance vs. Drain Current Noise Voltage vs. Frequency 350 300 250 200 150 100 P-Channel General Purpose Amplifier (continued) Transconductance vs. Capacitance vs. Voltage Power Dissipation vs. Ambient Temperature TO-92 SOT- ...

  • Page 5

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...