2N5460 Fairchild Semiconductor, 2N5460 Datasheet
2N5460
Manufacturer Part Number
2N5460
Description
IC AMP GP P-CHAN 40V 10MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N5462.pdf
(5 pages)
Specifications of 2N5460
Current - Drain (idss) @ Vds (vgs=0)
1mA @ 15V
Fet Type
P-Channel
Voltage - Breakdown (v(br)gss)
40V
Voltage - Cutoff (vgs Off) @ Id
750mV @ 1µA
Input Capacitance (ciss) @ Vds
7pF @ 15V
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Power - Max
350mW
Configuration
Single
Transistor Polarity
P-Channel
Power Dissipation
350 mW
Gate-source Breakdown Voltage
40 V
Drain Current (idss At Vgs=0)
7 mA to 13 mA
Forward Transconductance Gfs (max / Min)
0.001 S to 0.004 S
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
- 40 V
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Breakdown Voltage Vbr
40V
Gate-source Cutoff Voltage Vgs(off) Max
6V
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Rohs Compliant
Yes
Current Rating
10mA
Transistor Type
JFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N5460
Manufacturer:
FSC
Quantity:
16 107
Company:
Part Number:
2N5460
Manufacturer:
FAIRCHILD
Quantity:
13 570
Part Number:
2N5460
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
2001 Fairchild Semiconductor Corporation
V
V
I
T
P
R
R
Symbol
Symbol
GF
J
DG
GS
D
P-Channel General Purpose Amplifier
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
*
This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources. Sourced
from Process 89.
Absolute Maximum Ratings*
Thermal Characteristics
JC
JA
,T
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
-
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
S
Derate above 25 C
D
2N5460
2N5461
2N5462
Characteristic
TO-92
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
Mark: 6E / 61U / 61V
2N5460-5462
SOT-23
MMBF5460
MMBF5461
MMBF5462
350
125
357
2.8
G
Max
*MMBF5460-5462
D
-55 to +150
Value
NOTE: Source & Drain
- 40
40
10
are interchangeable
2N5460/5461/5462/MMBF5460/5461/5462, Rev A
225
556
1.8
S
Units
mW/ C
mA
Units
V
V
C
mW
C/W
C/W
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2N5460 Summary of contents
Page 1
... Mark 61U / 61V TA = 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted 2N5460-5462 350 2.8 125 357 S D NOTE: Source & Drain are interchangeable Value Units - -55 to +150 C Max Units *MMBF5460-5462 225 mW 1.8 mW/ C C/W 556 C/W 2N5460/5461/5462/MMBF5460/5461/5462, Rev A ...
Page 2
Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Gate-Source Breakdown Voltage (BR)GSS I Gate Reverse Current GSS V Gate-Source Cutoff Voltage GS(off) V Gate-Source Voltage GS ON CHARACTERISTICS I Zero-Gate Voltage Drain Current* DSS SMALL SIGNAL CHARACTERISTICS Forward Transfer Conductance g ...
Page 3
Typical Characteristics Transfer Characteristics Common Drain-Source Leakage Current vs. Voltage P-Channel General Purpose Amplifier (continued) Transfer Charactersitics Parameter Interactions Channel Resistance vs. (continued) Temperature ...
Page 4
Typical Characteristics Output Conductance vs. Drain Current Noise Voltage vs. Frequency 350 300 250 200 150 100 P-Channel General Purpose Amplifier (continued) Transconductance vs. Capacitance vs. Voltage Power Dissipation vs. Ambient Temperature TO-92 SOT- ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...