2N5460 Fairchild Semiconductor, 2N5460 Datasheet - Page 4

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2N5460

Manufacturer Part Number
2N5460
Description
IC AMP GP P-CHAN 40V 10MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of 2N5460

Current - Drain (idss) @ Vds (vgs=0)
1mA @ 15V
Fet Type
P-Channel
Voltage - Breakdown (v(br)gss)
40V
Voltage - Cutoff (vgs Off) @ Id
750mV @ 1µA
Input Capacitance (ciss) @ Vds
7pF @ 15V
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Power - Max
350mW
Configuration
Single
Transistor Polarity
P-Channel
Power Dissipation
350 mW
Gate-source Breakdown Voltage
40 V
Drain Current (idss At Vgs=0)
7 mA to 13 mA
Forward Transconductance Gfs (max / Min)
0.001 S to 0.004 S
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
- 40 V
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Breakdown Voltage Vbr
40V
Gate-source Cutoff Voltage Vgs(off) Max
6V
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Rohs Compliant
Yes
Current Rating
10mA
Transistor Type
JFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Typical Characteristics
Noise Voltage vs. Frequency
Output Conductance vs.
Drain Current
350
300
250
200
150
100
50
0
0
SOT-23
(continued)
25
Power Dissipation vs.
Ambient Temperature
TEMPERATURE ( C)
50
TO-92
P-Channel General Purpose Amplifier
75
100
º
125
Capacitance vs. Voltage
Transconductance vs.
150
Drain Current
(continued)
5

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