J109 Fairchild Semiconductor, J109 Datasheet

J109

Manufacturer Part Number

J109

Description

IC SWITCH N-CHAN 25V 10MA TO-92

Manufacturer

Fairchild Semiconductor

Datasheet

1.J109_D26Z.pdf (7 pages)

Specifications of J109

Current - Drain (idss) @ Vds (vgs=0)

40mA @ 15V

Fet Type

N-Channel

Voltage - Breakdown (v(br)gss)

25V

Voltage - Cutoff (vgs Off) @ Id

2V @ 10nA

Resistance - Rds(on)

12 Ohm

Mounting Type

Through Hole

Package / Case

TO-92-3 (Standard Body), TO-226

Power - Max

625mW

Configuration

Single

Transistor Polarity

N-Channel

Power Dissipation

625 mW

Gate-source Breakdown Voltage

- 25 V

Gate-source Cutoff Voltage

- 6 V

Drain Current (idss At Vgs=0)

1 mA to 5 mA

Resistance Drain-source Rds (on)

12 Ohms

Maximum Operating Temperature

+ 150 C

Maximum Drain Gate Voltage

25 V

Minimum Operating Temperature

- 55 C

Mounting Style

Through Hole

Breakdown Voltage Vbr

-25V

Gate-source Cutoff Voltage Vgs(off) Max

-6V

Power Dissipation Pd

625mW

Operating Temperature Range

-55Â°C To +150Â°C

No. Of Pins

Current Rating

40mA

Rohs Compliant

Yes

Channel Type

Gate-source Voltage (max)

25V

Pin Count

Drain-gate Voltage (max)

25V

Operating Temperature (min)

-55C

Operating Temperature (max)

150C

Operating Temperature Classification

Military

Mounting

Through Hole

Package Type

TO-92

Transistor Type

JFET

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

J109FS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

J109

Manufacturer:

FSC/VISHAY

Quantity:

10 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

J109

Manufacturer:

Fairchild Semiconductor

Quantity:

29 953

Company:

H&T Electronics

Part Number:

J109-D26Z

Quantity:

133 829

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N-Channel Switch

• This device is designed for digital switching

• Sourced from Process 58.

Absolute Maximum Ratings *

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics

* Pulse Test: Pulse Width

Off Characteristics

On Characteristics

Small Signal Characteristics

GSS

DSS

applications where very low on resistance is

mandatory.

Symbol

(BR)GSS

, T

(on)

(off)

(on)

Symbol

(off)

stg

Gate-Source Breakdwon Voltage

Gate Reverse Current

Gate-Source Cutoff Voltage

Zero-Gate Voltage Drain Current *

Drain-Source On Resistance

Drain Gate & Source Gate On

Capacitance

Drain-Gate Off Capacitance

Source-Gate Off Capacitance

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

Operating and Storage Junction Temperature Range

300 s, Duty Cycle

Parameter

J108/J109/J110/MMBFJ108

2.0%

=25 C unless otherwise noted

Parameter

=25 C unless otherwise noted

= -10 A, V

= 15V, I

= 0, V

= -15V, V

0.1V, V

1. Drain 2. Source 3. Gate

Test Condition

= 0, f = 1.0MHz

= -10, f = 1.0MHz

= 10nA

= 0

= 0, T

= 100 C

TO-92

108

109

110

109

110

109

110

-55 ~ +150

1. Drain 2. Source 3. Gate

Value

-25

Min.

-3.0

-2.0

-0.5

-25

Max.

-200

-3.0

-6.0

-4.0

-10

8.0

Rev. B1, November 2002

SuperSOT-3

Marking: I8

Units

Related parts for J109

J109 Summary of contents

Page 1

... J108/J109/J110/MMBFJ108 N-Channel Switch • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. Absolute Maximum Ratings * Symbol V Drain-Gate Voltage DG V Gate-Source Voltage GS I Forward Gate Current Operating and Storage Junction Temperature Range J stg * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ...

Page 2

... P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4 PCB 1.6” 1.6” 0.06" ©2002 Fairchild Semiconductor Corporation T =25 C unless otherwise noted A Parameter Max. Units J108 - 110 *MMBFJ108 625 350 mW 5.0 2.8 ...

Page 3

... Normalized Drain Resistance vs Bias Voltage 100 V @ 5.0V GS(off ________ GS(off 0.2 0 NORMALIZED GATE-SOURCE VOLTAGE (V) GS GS(off) Figure 5. Normalized Drain Resistance vs Bias Voltage ©2002 Fairchild Semiconductor Corporation 100 I DSS - 2 GS(off 캜 캜 캜 캜 TYP 5.0 V GS(off) _ 1.2 1 TYP 5.0V ...

Page 4

... 캜 캜 캜 캜 10V 125 캜 캜 캜 캜 1.0 kHz 0 DRAIN CURRENT (mA) D Figure 11. Transconductance vs Drain Current ©2002 Fairchild Semiconductor Corporation (Continued 캜 캜 캜 캜 GS(off -10 0 Figure 8. Switching Turn-On Time vs Drain Current 100 125 캜 캜 캜 캜 ...

Page 5

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B1, November 2002 ...

Page 6

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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