Manufacturer Part NumberJ177,126
DescriptionJFET P-CHAN 30V SOT-54
ManufacturerNXP Semiconductors
J177,126 datasheet

Specifications of J177,126

Package / CaseTO-236-3, SC-59, SOT-23-3Current - Drain (idss) @ Vds (vgs=0)1.5mA @ 15V
Drain To Source Voltage (vdss)30VFet TypeP-Channel
Voltage - Breakdown (v(br)gss)30VVoltage - Cutoff (vgs Off) @ Id800mV @ 10nA
Input Capacitance (ciss) @ Vds8pF @ 10V (VGS)Resistance - Rds(on)300 Ohm
Mounting TypeThrough HolePower - Max400mW
ConfigurationSingleMinimum Operating Temperature- 65 C
Mounting StyleSMD/SMTTransistor PolarityP-Channel
Resistance Drain-source Rds (on)300 OhmsDrain Source Voltage Vds30 V
Gate-source Cutoff Voltage0.8 V to 2.25 VGate-source Breakdown Voltage30 V
Maximum Drain Gate Voltage30 VContinuous Drain Current20 mA
Drain Current (idss At Vgs=0)1.5 mA to 20 mAPower Dissipation300 mW
Maximum Operating Temperature+ 150 CChannel TypeP
Gate-source Voltage (max)30VDrain Current (max)20mA
Drain-gate Voltage (max)30VDrain-source Volt (max)30V
Operating Temperature (max)150COperating Temperature ClassificationMilitary
MountingThrough HolePin Count3
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names934005320126
J177 AMO
J177 AMO
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PMBFJ174 to 177
P-channel silicon field-effect
Product specification
April 1995

J177,126 Summary of contents

  • Page 1

    DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification DISCRETE SEMICONDUCTORS April 1995 ...

  • Page 2

    ... NXP Semiconductors P-channel silicon field-effect transistors DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections. PINNING 1 = drain 2 = source ...

  • Page 3

    ... NXP Semiconductors P-channel silicon field-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage Gate-drain voltage Gate current (d.c.) Total power dissipation = 25 C ( amb Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient in free air STATIC CHARACTERISTICS = 25  ...

  • Page 4

    ... NXP Semiconductors P-channel silicon field-effect transistors DYNAMIC CHARACTERISTICS = 25 C unless otherwise specified T j Input capacitance MHz Feedback capacitance MHz Switching times (see Fig.2  3) Delay time Rise time Turn-on time Storage temperature Fall time Turn-off time Test conditions: −V DD handbook, halfpage 50 Ω ...

  • Page 5

    ... NXP Semiconductors P-channel silicon field-effect transistors PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 April 1995 scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

  • Page 6

    ... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

  • Page 7

    ... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

  • Page 8

    ... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...