J177,126 NXP Semiconductors, J177,126 Datasheet

JFET P-CHAN 30V SOT-54

J177,126

Manufacturer Part Number
J177,126
Description
JFET P-CHAN 30V SOT-54
Manufacturer
NXP Semiconductors
Datasheet

Specifications of J177,126

Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
1.5mA @ 15V
Drain To Source Voltage (vdss)
30V
Fet Type
P-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
800mV @ 10nA
Input Capacitance (ciss) @ Vds
8pF @ 10V (VGS)
Resistance - Rds(on)
300 Ohm
Mounting Type
Through Hole
Power - Max
400mW
Configuration
Single
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
300 Ohms
Drain Source Voltage Vds
30 V
Gate-source Cutoff Voltage
0.8 V to 2.25 V
Gate-source Breakdown Voltage
30 V
Maximum Drain Gate Voltage
30 V
Continuous Drain Current
20 mA
Drain Current (idss At Vgs=0)
1.5 mA to 20 mA
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Channel Type
P
Gate-source Voltage (max)
30V
Drain Current (max)
20mA
Drain-gate Voltage (max)
30V
Drain-source Volt (max)
30V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934005320126
J177 AMO
J177 AMO
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ174 to 177
P-channel silicon field-effect
transistors
Product specification
April 1995

Related parts for J177,126

J177,126 Summary of contents

Page 1

DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification DISCRETE SEMICONDUCTORS April 1995 ...

Page 2

... NXP Semiconductors P-channel silicon field-effect transistors DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections. PINNING 1 = drain 2 = source ...

Page 3

... NXP Semiconductors P-channel silicon field-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage Gate-drain voltage Gate current (d.c.) Total power dissipation = 25 C ( amb Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient in free air STATIC CHARACTERISTICS = 25  ...

Page 4

... NXP Semiconductors P-channel silicon field-effect transistors DYNAMIC CHARACTERISTICS = 25 C unless otherwise specified T j Input capacitance MHz Feedback capacitance MHz Switching times (see Fig.2  3) Delay time Rise time Turn-on time Storage temperature Fall time Turn-off time Test conditions: −V DD handbook, halfpage 50 Ω ...

Page 5

... NXP Semiconductors P-channel silicon field-effect transistors PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 April 1995 scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 6

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 7

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 8

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

Related keywords