J177,126 NXP Semiconductors, J177,126 Datasheet - Page 2

• Manufacturer Part Number: J177,126
• Description: JFET P-CHAN 30V SOT-54
• Manufacturer: NXP Semiconductors

Specifications of J177,126

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 1.5mA @ 15V
• Drain To Source Voltage (vdss): 30V
• Fet Type: P-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 800mV @ 10nA
• Input Capacitance (ciss) @ Vds: 8pF @ 10V (VGS)
• Resistance - Rds(on): 300 Ohm
• Mounting Type: Through Hole
• Power - Max: 400mW
• Configuration: Single
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 300 Ohms
• Drain Source Voltage Vds: 30 V
• Gate-source Cutoff Voltage: 0.8 V to 2.25 V
• Gate-source Breakdown Voltage: 30 V
• Maximum Drain Gate Voltage: 30 V
• Continuous Drain Current: 20 mA
• Drain Current (idss At Vgs=0): 1.5 mA to 20 mA
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Channel Type: P
• Gate-source Voltage (max): 30V
• Drain Current (max): 20mA
• Drain-gate Voltage (max): 30V
• Drain-source Volt (max): 30V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934005320126; J177 AMO; J177 AMO

NXP Semiconductors
DESCRIPTION
Silicon symmetrical p-channel
junction FETs in plastic
microminiature SOT23
envelopes.They are intended for
application with analogue switches,
choppers, commutators etc. using
SMD technology. A special feature is
the interchangeability of the drain and
source connections.
PINNING
Note
1. Drain and source are
Marking codes:
QUICK REFERENCE DATA
April 1995
1 = drain
2 = source
3 = gate
174
175
176
177
Drain-source voltage
Gate-source voltage
Gate current
Total power dissipation
Drain current
Drain-source ON-resistance
P-channel silicon field-effect transistors
up to T
V
V
interchangeable.
DS
DS
: p6X
: p6W
: p6S
: p6Y
= 0,1 V; V
= 15 V; V
amb
= 25 C
GS
GS
= 0
= 0
handbook, halfpage
Fig.1 Simplified outline and symbol, SOT23.
 V
V
I
P
I
R
2
GSO
tot
DS on
G
DSS
Top view
1
DS



max.
max.
max.
max.
PMBFJ174
3
2
135
20
85
g
175
125
MAM386
PMBFJ174 to 177
70
7
300
30
30
50
Product specification
d
s
176
250
35
2
177
300 
1,5
20
V
V
mA
mW
mA
mA