J177,126 NXP Semiconductors, J177,126 Datasheet - Page 3

• Manufacturer Part Number: J177,126
• Description: JFET P-CHAN 30V SOT-54
• Manufacturer: NXP Semiconductors

Specifications of J177,126

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 1.5mA @ 15V
• Drain To Source Voltage (vdss): 30V
• Fet Type: P-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 800mV @ 10nA
• Input Capacitance (ciss) @ Vds: 8pF @ 10V (VGS)
• Resistance - Rds(on): 300 Ohm
• Mounting Type: Through Hole
• Power - Max: 400mW
• Configuration: Single
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 300 Ohms
• Drain Source Voltage Vds: 30 V
• Gate-source Cutoff Voltage: 0.8 V to 2.25 V
• Gate-source Breakdown Voltage: 30 V
• Maximum Drain Gate Voltage: 30 V
• Continuous Drain Current: 20 mA
• Drain Current (idss At Vgs=0): 1.5 mA to 20 mA
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Channel Type: P
• Gate-source Voltage (max): 30V
• Drain Current (max): 20mA
• Drain-gate Voltage (max): 30V
• Drain-source Volt (max): 30V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934005320126; J177 AMO; J177 AMO

NXP Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
STATIC CHARACTERISTICS
T
Note
1. Mounted on a ceramic substrate of 8 mm  10 mm  0,7 mm.
April 1995
Drain-source voltage
Gate-source voltage
Gate-drain voltage
Gate current (d.c.)
Total power dissipation
Storage temperature range
Junction temperature
From junction to ambient in free air
Gate cut-off current
Drain cut-off current
Drain current
Gate-source breakdown voltage
Gate-source cut-off voltage
Drain-source ON-resistance
j
= 25 C unless otherwise specified
P-channel silicon field-effect transistors
up to T
V
V
V
I
I
V
G
GS
D
= 1 A; V
DS
DS
DS
= 10 nA; V
= 20 V; V
= 15 V; V
= 15 V; V
= 0,1 V; V
amb
= 25 C
DS
DS
DS
= 0
GS
GS
GS
= 0
= 15 V
= 0
(1)
= 0
= 10 V
3
R
V
I
I
I
V
R
 V
V
V
I
P
T
T
GSS
th j-a
(BR)GSS
GS off
stg
j
DS on
GSO
GDO
tot
DSX
DSS
G
DS
max.
max.
max.
max.
max.
max.
=








PMBFJ174
135
20
30
10
85
1
1
5
PMBFJ174 to 177
65 to  150
175
125
70
30
430
300
150
30
30
30
50
1
1
7
3
6
Product specification
176
250
35
30
1
1
2
1
4
2,25
177
300 
1,5
0,8
20
30 V
1 nA
1 nA
K/W
V
V
V
mA
mW
C
C
mA
mA
V
V