J177,126 NXP Semiconductors, J177,126 Datasheet - Page 8

• Manufacturer Part Number: J177,126
• Description: JFET P-CHAN 30V SOT-54
• Manufacturer: NXP Semiconductors

Specifications of J177,126

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 1.5mA @ 15V
• Drain To Source Voltage (vdss): 30V
• Fet Type: P-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 800mV @ 10nA
• Input Capacitance (ciss) @ Vds: 8pF @ 10V (VGS)
• Resistance - Rds(on): 300 Ohm
• Mounting Type: Through Hole
• Power - Max: 400mW
• Configuration: Single
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 300 Ohms
• Drain Source Voltage Vds: 30 V
• Gate-source Cutoff Voltage: 0.8 V to 2.25 V
• Gate-source Breakdown Voltage: 30 V
• Maximum Drain Gate Voltage: 30 V
• Continuous Drain Current: 20 mA
• Drain Current (idss At Vgs=0): 1.5 mA to 20 mA
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Channel Type: P
• Gate-source Voltage (max): 30V
• Drain Current (max): 20mA
• Drain-gate Voltage (max): 30V
• Drain-source Volt (max): 30V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934005320126; J177 AMO; J177 AMO

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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
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provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
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R77/02/8
Date of release: April 1995