MPF4393RLRPG ON Semiconductor, MPF4393RLRPG Datasheet

MPF4393RLRPG

Manufacturer Part Number

MPF4393RLRPG

Description

AMP JFET SW N-CHAN 30V TO-92

Manufacturer

ON Semiconductor

Datasheet

1.MPF4393RLRPG.pdf (6 pages)

Specifications of MPF4393RLRPG

Current - Drain (idss) @ Vds (vgs=0)

5mA @ 15V

Drain To Source Voltage (vdss)

30V

Fet Type

N-Channel

Voltage - Breakdown (v(br)gss)

30V

Voltage - Cutoff (vgs Off) @ Id

500mV @ 10nA

Input Capacitance (ciss) @ Vds

10pF @ 15V (VGS)

Resistance - Rds(on)

100 Ohm

Mounting Type

Through Hole

Package / Case

TO-92-3 (Standard Body), TO-226

Power - Max

350mW

Channel Type

Configuration

Single

Gate-source Voltage (max)

30V

Drain-gate Voltage (max)

30V

Drain-source Volt (max)

30V

Operating Temperature (max)

150C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

Package Type

TO-92

Transistor Polarity

N-Channel

Drain Source Voltage Vds

30 V

Gate-source Breakdown Voltage

30 V

Drain Current (idss At Vgs=0)

5 mA to 30 mA

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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MPF4392, MPF4393

JFET Switching Transistors

N−Channel − Depletion

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

January, 2006 − Rev. 5

MAXIMUM RATINGS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Drain −Source Voltage

Drain −Gate Voltag

Gate−Source Voltage

Forward Gate Current

Total Device Dissipation

Operating and Storage Channel

Temperature Range

Pb−Free Packages are Available*

@ T

Derate above 25°C

= 25°C

Rating

Preferred Devices

Symbol

channel

G(f)

stg

−65 to +150

Value

350

2.8

mW/°C

mAdc

Unit

Vdc

°C

Preferred devices are recommended choices for future use

and best overall value.

MPF4392

MPF4392G

MPF4393

MPF4393G

MPF4393RLRP

MPF4393RLRPG

Device

(Note: Microdot may be in either location)

MPF439x = Device Code

ORDERING INFORMATION

GATE

MARKING DIAGRAM

http://onsemi.com

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Pb−Free)

AYWW G

Package

TO−92 (TO−226AA)

TO−92

x = 2 or 3

439x

MPF

Publication Order Number:

CASE 29−11

STYLE 5

1 DRAIN

2 SOURCE

1000 / Ammo Box

1000 Units / Bulk

Shipping

MPF4392/D

†

Related parts for MPF4393RLRPG

MPF4393RLRPG Summary of contents

Page 1

... MPF4393 TO−92 1000 Units / Bulk MPF4393G TO−92 1000 Units / Bulk (Pb−Free) MPF4393RLRP TO−92 1000 / Ammo Box MPF4393RLRPG TO−92 1000 / Ammo Box (Pb−Free) Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MPF4392/D † ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Gate −Source Breakdown Voltage = 1.0 mAdc Gate Reverse Current ( Vdc Vdc 100°C) ...

Page 3

TYPICAL SWITCHING CHARACTERISTICS 1000 T = 25°C J 500 MPF4392 ′ 200 MPF4393 100 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7 DRAIN ...

Page 4

V R SET DS(off) INPUT GEN GEN INPUT PULSE & ≤ 0. ′ ...

Page 5

T = 25°C channel DS(on 100 110 120 130 140 150 I , ZERO−GATE ...

Page 6

... ISSUE SECTION X−X N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

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