2N5461 ON Semiconductor, 2N5461 Datasheet

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2N5461

Manufacturer Part Number
2N5461
Description
IC JFET P-CH SS 40V TO92
Manufacturer
ON Semiconductor
Datasheet

Specifications of 2N5461

Current - Drain (idss) @ Vds (vgs=0)
2mA @ 15V
Fet Type
P-Channel
Voltage - Breakdown (v(br)gss)
40V
Voltage - Cutoff (vgs Off) @ Id
1V @ 1µA
Input Capacitance (ciss) @ Vds
7pF @ 15V
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Power - Max
350mW
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
2N5461OS

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2N5460, 2N5461, 2N5462
JFET Amplifier
P−Channel − Depletion
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 5
MAXIMUM RATINGS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Drain − Gate Voltage
Reverse Gate − Source Voltage
Forward Gate Current
Total Device Dissipation @ T
Derate above 25°C
Junction Temperature Range
Storage Channel Temperature Range
Pb−Free Packages are Available*
Rating
A
= 25°C
Symbol
V
V
I
T
P
G(f)
GSR
T
DG
stg
D
J
−65 to +135
−65 to +150
Value
350
2.8
40
40
10
1
mW/°C
mAdc
Unit
Vdc
Vdc
mW
°C
°C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
(Note: Microdot may be in either location)
ORDERING INFORMATION
2N546x = Device Code
A
Y
WW
G
1 2
GATE
MARKING DIAGRAM
http://onsemi.com
3
3
= Assembly Location
= Year
= Work Week
= Pb−Free Package
x = 0, 1, or 2
AYWWG
546x
2N
G
Publication Order Number:
CASE 29
STYLE 7
1 SOURCE
TO−92
2 DRAIN
2N5460/D

Related parts for 2N5461

2N5461 Summary of contents

Page 1

... JFET Amplifier P−Channel − Depletion Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Drain − Gate Voltage Reverse Gate − Source Voltage Forward Gate Current Total Device Dissipation @ T = 25°C A Derate above 25°C Junction Temperature Range Storage Channel Temperature Range Stresses exceeding Maximum Ratings may damage the device ...

Page 2

... Tape and Reel Packaging Specifications Brochure, BRD8011/D. 2N5460, 2N5461, 2N5462 (T = 25°C unless otherwise noted 2N5460, 2N5461, 2N5462 2N5460, 2N5461, 2N5462 2N5460, 2N5461, 2N5462 2N5460 2N5461 2N5462 2N5460 2N5461 2N5462 ...

Page 3

... T = −55°C A 8.0 25°C 125°C 6.0 4.0 2 1.0 2.0 3.0 4.0 5 GATE−SOURCE VOLTAGE (VOLTS) GS Figure 5.0 V GS(off) 2N5460, 2N5461, 2N5462 FORWARD TRANSFER ADMITTANCE 4000 3000 2000 1000 700 500 300 200 1.4 1.6 1.8 2.0 0.2 0.3 10000 7000 ...

Page 4

... Drain Current 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1 osp NOTE: 1. Graphical data is presented for dc conditions. Tabular Figure 10. Equivalent Low Frequency Circuit 2N5460, 2N5461, 2N5462 9 1.0 kHz 8.0 7.0 6 3.0 mA DSS 5.0 4.0 6 2.0 1 ...

Page 5

... Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com 2N5460, 2N5461, 2N5462 PACKAGE DIMENSIONS TO−92 CASE 29−11 ISSUE AL ...

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