MMBF5460LT1 ON Semiconductor, MMBF5460LT1 Datasheet

JFET P-CHAN 40V SOT23

MMBF5460LT1

Manufacturer Part Number
MMBF5460LT1
Description
JFET P-CHAN 40V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBF5460LT1

Current - Drain (idss) @ Vds (vgs=0)
1mA @ 15V
Fet Type
P-Channel
Voltage - Breakdown (v(br)gss)
40V
Voltage - Cutoff (vgs Off) @ Id
750mV @ 1µA
Input Capacitance (ciss) @ Vds
7pF @ 15V
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Power - Max
225mW
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MMBF5460LT1OSCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBF5460LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MMBF5460LT1G
Manufacturer:
ON
Quantity:
5 707
MMBF5460LT1
JFET − General Purpose
Transistor
P−Channel
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Drain−Gate Voltage
Reverse Gate−Source Voltage
Forward Gate Current
Total Device Dissipation FR−5 Board,
(Note 1) T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Pb−Free Package is Available
A
= 25°C
Characteristic
Rating
Symbol
Symbol
T
V
R
J
V
I
P
GSR
, T
GF
qJA
DG
D
stg
−55 to +150
Value
Max
225
556
1.8
40
40
10
1
mW/°C
mAdc
°C/W
Unit
Unit
Vdc
Vdc
mW
°C
†For information on tape and reel specifications,
MMBF5460LT1
MMBF5460LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ORDERING INFORMATION
GATE
M6E = Device Code
M
G
MARKING DIAGRAM
3
http://onsemi.com
SOT−23 (TO−236)
1
= Date Code*
= Pb−Free Package
1
(Pb−Free)
Package
CASE 318
SOT−23
SOT−23
STYLE 10
M6E M G
2
Publication Order Number:
G
1 DRAIN
2 SOURCE
3
3,000 / Tape & Reel
3,000 / Tape & Reel
MMBF5460LT1/D
Shipping

Related parts for MMBF5460LT1

MMBF5460LT1 Summary of contents

Page 1

... Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping SOT−23 3,000 / Tape & Reel SOT−23 3,000 / Tape & Reel (Pb−Free) Publication Order Number: MMBF5460LT1/D † ...

Page 2

... SMALL−SIGNAL CHARACTERISTICS Forward Transfer Admittance ( Vdc 1.0 kHz Output Admittance ( Vdc 1.0 kHz Input Capacitance ( Vdc 1.0 MHz Reverse Transfer Capacitance ( Vdc 1.0 MHz MMBF5460LT1 = 25°C unless otherwise noted) A Symbol V (BR)GSS I GSS V GS(off DSS | rss http://onsemi.com 2 Min Typ Max 40 − ...

Page 3

... T = −55°C A 8.0 25°C 125°C 6.0 4.0 2 1.0 2.0 3.0 4.0 5 GATE−SOURCE VOLTAGE (VOLTS) GS Figure 5.0 Volts GS(off) MMBF5460LT1 FORWARD TRANSFER ADMITTANCE 4000 3000 2000 1000 700 500 300 200 1.4 1.6 1.8 2.0 0.2 0.3 10000 7000 5000 ...

Page 4

... C *C osp NOTE: 1. Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Figure 10. Equivalent Low Frequency Circuit MMBF5460LT1 9 1.0 kHz 8.0 7.0 6 3.0 mA DSS 5.0 4.0 6 ...

Page 5

... ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MMBF5460LT1/D ...

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