JFET SS P-CHAN 25V SOT23

MMBFJ175LT1

Manufacturer Part NumberMMBFJ175LT1
DescriptionJFET SS P-CHAN 25V SOT23
ManufacturerON Semiconductor
MMBFJ175LT1 datasheet
 

Specifications of MMBFJ175LT1

Current - Drain (idss) @ Vds (vgs=0)7mA @ 15VFet TypeP-Channel
Voltage - Breakdown (v(br)gss)30VVoltage - Cutoff (vgs Off) @ Id3V @ 10nA
Input Capacitance (ciss) @ Vds11pF @ 10V (VGS)Resistance - Rds(on)125 Ohm
Mounting TypeSurface MountPackage / CaseTO-236-3, SC-59, SOT-23-3
Power - Max225mWDc0640
Lead Free Status / RoHS StatusContains lead / RoHS non-compliantOther namesMMBFJ175LT1OSCT
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MMBFJ175LT1G
JFET Chopper
P−Channel − Depletion
Features
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Drain−Gate Voltage
Reverse Gate−Source Voltage
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T
= 25°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Gate −Source Breakdown Voltage
(V
= 0, I
= 1.0 mA)
DS
D
Gate Reverse Current
(V
= 0 V, V
= 20 V)
DS
GS
Gate −Source Cutoff Voltage
(V
= 15, I
= 10 nA)
DS
D
ON CHARACTERISTICS
Zero Gate−Voltage Drain Current (Note 2)
(V
= 0, V
= 15 V)
GS
DS
Drain Cutoff Current
(V
= 15 V, V
= 10 V)
DS
GS
Drain Source On Resistance
(I
= 500 mA)
D
Input Capacitance
V
= 0, V
= 10V
DS
GS
Reverse Transfer
f = 1.0 MHz
Capacitance
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
Symbol
Value
Unit
V
25
V
DG
V
−25
V
GS(r)
Symbol
Max
Unit
P
D
225
mW
1.8
mW/°C
556
R
°C/W
qJA
T
, T
−55 to +150
°C
J
stg
(T
= 25°C unless otherwise noted)
A
Symbol
Min
Max
Unit
V
30
V
(BR)GSS
I
1.0
nA
GSS
V
3.0
6.0
V
GS(OFF)
I
7.0
60
mA
DSS
I
1.0
nA
D(off)
r
125
W
DS(on)
C
11
iss
pF
C
5.5
rss
1
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
3
SOT−23 (TO−236)
CASE 318
1
STYLE 10
2
MARKING DIAGRAM
6W M G
G
1
6W
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBFJ175LT1G
SOT−23
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMBFJ175LT1/D

MMBFJ175LT1 Summary of contents

  • Page 1

    ... ORDERING INFORMATION Device Package Shipping MMBFJ175LT1G SOT−23 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBFJ175LT1/D † ...

  • Page 2

    ... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBFJ175LT1/D ...