MOSFET P-CH DUAL 20V SC89-6

FDY1002PZ

Manufacturer Part NumberFDY1002PZ
DescriptionMOSFET P-CH DUAL 20V SC89-6
ManufacturerFairchild Semiconductor
SeriesPowerTrench®
FDY1002PZ datasheet
 


Specifications of FDY1002PZ

Fet Type2 P-Channel (Dual)Fet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs500 mOhm @ 830mA, 4.5VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C830mAVgs(th) (max) @ Id1V @ 250µA
Gate Charge (qg) @ Vgs3.1nC @ 4.5VInput Capacitance (ciss) @ Vds135pF @ 10V
Power - Max446mWMounting TypeSurface Mount
Package / CaseSC-89-6, SOT-563F, SOT-666Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesFDY1002PZTR  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
Page 1/7

Download datasheet (268Kb)Embed
Next
FDY1002PZ
Dual P-Channel (
1.5 V) Specified PowerTrench
–20 V, –0.83 A, 0.5 Ω
Features
= 0.5 Ω at V
Max r
= –4.5 V, I
DS(on)
GS
= 0.7 Ω at V
Max r
= –2.5 V, I
DS(on)
GS
= 1.2 Ω at V
Max r
= –1.8 V, I
DS(on)
GS
= 1.8 Ω at V
Max r
= –1.5 V, I
DS(on)
GS
HBM ESD protection level = 1400 V (Note 3)
RoHS Compliant
6
1
2
3
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DS
V
Gate to Source Voltage
GS
Drain Current -Continuous
I
D
-Pulsed
Power Dissipation
P
D
Power Dissipation
T
, T
Operating and Storage Junction Temperature Range
J
STG
Thermal Characteristics
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
Package Marking and Ordering Information
Device Marking
Device
G
FDY1002PZ
©2008 Fairchild Semiconductor Corporation
FDY1002PZ Rev.B1
General Description
= –0.83 A
This Dual P-Channel MOSFET has been designed using
D
Fairchild Semiconductor’s advanced Power Trench process to
= –0.70 A
D
optimize the r
= –0.43 A
D
= –0.36 A
D
Application
Li-Ion Battery Pack
5
4
SC89-6
T
= 25 °C unless otherwise noted
A
Parameter
Package
Reel Size
SC89-6
1
October 2008
®
MOSFET
@V
= –1.5 V.
DS(on)
GS
D
S
6
1
1
1
G
G
2
5
1
2
S
4
3
D
2
2
Ratings
–20
±8
(Note 1a)
–0.83
–1.0
(Note 1a)
0.625
(Note 1b)
0.446
–55 to +150
(Note 1a)
200
(Note 1b)
280
Tape Width
Quantity
7 ”
8 mm
3000 units
www.fairchildsemi.com
Units
V
V
A
W
°C
°C/W

FDY1002PZ Summary of contents

  • Page 1

    ... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device G FDY1002PZ ©2008 Fairchild Semiconductor Corporation FDY1002PZ Rev.B1 General Description = –0.83 A This Dual P-Channel MOSFET has been designed using D Fairchild Semiconductor’s advanced Power Trench process to = –0. optimize the r = – ...

  • Page 2

    ... Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDY1002PZ Rev. °C unless otherwise noted J Test Conditions = – ...

  • Page 3

    ... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 0 125 C J 0.4 0.2 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDY1002PZ Rev. °C unless otherwise noted -1 µ s 1.5 2.0 2.0 1.6 1.2 0.8 0.4 0 100 125 150 0.01 o ...

  • Page 4

    ... Gate Charge Characteristics 125 GATE TO SOURCE VOLTAGE ( Figure 9. Gate Leakage Current vs Gate to Source Voltage -4 0 Figure 11. Single Pulse Maximum Power Dissipation FDY1002PZ Rev. °C unless otherwise noted J 500 100 -12 V 2.0 2.5 3 PULSE WIDTH (sec MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 8 ...

  • Page 5

    ... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE R 0. Figure 12. FDY1002PZ Rev. °C unless otherwise noted 280 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJA θ 100 ...

  • Page 6

    ... Dimensional Outline and Pad Layout 6 1.20 BSC 1 (0.20) 0.20 BSC FDY1002PZ Rev.B1 1.70 1.50 0.30 0.15 4 1.70 1.55 3 0.50 1.00 0.60 SEE DETAIL A 0.56 0.35 BSC NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. ...

  • Page 7

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDY1002PZ Rev. B1 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...