FDY1002PZ Fairchild Semiconductor, FDY1002PZ Datasheet

MOSFET P-CH DUAL 20V SC89-6

FDY1002PZ

Manufacturer Part Number
FDY1002PZ
Description
MOSFET P-CH DUAL 20V SC89-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDY1002PZ

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
500 mOhm @ 830mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
830mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
3.1nC @ 4.5V
Input Capacitance (ciss) @ Vds
135pF @ 10V
Power - Max
446mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-563F, SOT-666
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDY1002PZTR
©2008 Fairchild Semiconductor Corporation
FDY1002PZ Rev.B1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDY1002PZ
Dual P-Channel (
–20 V, –0.83 A, 0.5 Ω
Features
V
V
I
P
T
R
R
D
J
DS
GS
D
θJA
θJA
Max r
Max r
Max r
Max r
HBM ESD protection level = 1400 V (Note 3)
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
G
= 0.5 Ω at V
= 0.7 Ω at V
= 1.2 Ω at V
= 1.8 Ω at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
1
2
GS
GS
GS
GS
3
= –4.5 V, I
= –2.5 V, I
= –1.8 V, I
= –1.5 V, I
FDY1002PZ
-Pulsed
1.5 V) Specified PowerTrench
Device
6
SC89-6
D
D
D
D
5
= –0.83 A
= –0.70 A
= –0.43 A
= –0.36 A
T
4
A
= 25 °C unless otherwise noted
Parameter
Package
SC89-6
1
General Description
This Dual P-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process to
optimize the r
Application
Li-Ion Battery Pack
Reel Size
S
G
D
1
2
1
DS(on)
7 ”
3
2
1
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
@V
®
GS
MOSFET
= –1.5 V.
Tape Width
8 mm
–55 to +150
Ratings
–0.83
0.625
0.446
–1.0
–20
200
280
6
5
4
±8
D
G
S
2
1
2
October 2008
www.fairchildsemi.com
3000 units
Quantity
Units
°C/W
°C
W
V
V
A

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FDY1002PZ Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device G FDY1002PZ ©2008 Fairchild Semiconductor Corporation FDY1002PZ Rev.B1 General Description = –0.83 A This Dual P-Channel MOSFET has been designed using D Fairchild Semiconductor’s advanced Power Trench process to = –0. optimize the r = – ...

Page 2

... Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDY1002PZ Rev. °C unless otherwise noted J Test Conditions = – ...

Page 3

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 0 125 C J 0.4 0.2 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDY1002PZ Rev. °C unless otherwise noted -1 µ s 1.5 2.0 2.0 1.6 1.2 0.8 0.4 0 100 125 150 0.01 o ...

Page 4

... Gate Charge Characteristics 125 GATE TO SOURCE VOLTAGE ( Figure 9. Gate Leakage Current vs Gate to Source Voltage -4 0 Figure 11. Single Pulse Maximum Power Dissipation FDY1002PZ Rev. °C unless otherwise noted J 500 100 -12 V 2.0 2.5 3 PULSE WIDTH (sec MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 8 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE R 0. Figure 12. FDY1002PZ Rev. °C unless otherwise noted 280 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJA θ 100 ...

Page 6

... Dimensional Outline and Pad Layout 6 1.20 BSC 1 (0.20) 0.20 BSC FDY1002PZ Rev.B1 1.70 1.50 0.30 0.15 4 1.70 1.55 3 0.50 1.00 0.60 SEE DETAIL A 0.56 0.35 BSC NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDY1002PZ Rev. B1 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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