FDY1002PZ Fairchild Semiconductor, FDY1002PZ Datasheet - Page 4

• Manufacturer Part Number: FDY1002PZ
• Description: MOSFET P-CH DUAL 20V SC89-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDY1002PZ

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 mOhm @ 830mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 830mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 135pF @ 10V
• Power - Max: 446mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDY1002PZTR

FDY1002PZ Rev.B1
Typical Characteristics
10
10
10
10
10
5
4
3
2
1
0
Figure 7.
-1
-3
0.0
5
3
1
0.2
30
10
0
Figure 9. Gate Leakage Current
10
1
I
D
-3
V
= -0.83 A
GS
vs Gate to
= 0 V
0.5
-V
3
Gate Charge Characteristics
V
GS ,
DD
GATE TO SOURCE VOLTAGE (V)
T
= -8 V
1.0
Q
J
= 125
g
V
, GATE CHARGE (nC)
GS
Source Voltage
6
10
= -4.5 V
o
-2
C
V
1.5
Figure 11. Single Pulse Maximum Power Dissipation
DD
= -12 V
T
V
T
J
DD
9
J
= 25 °C unless otherwise noted
2.0
= 25
= -10 V
o
C
12
10
2.5
-1
t, PULSE WIDTH (sec)
3.0
15
4
10
0
0.01
500
100
0.1
10
2
1
1
0.1
0.1
Figure 10.
Figure 8.
f = 1 MHz
V
GS
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
J
A
θ
= 0 V
10
JA
= MAX RATED
= 25
-V
-V
1
= 280
DS
DS
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
o
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
C
Capacitance vs Drain
Forward Bias Safe
o
C/W
DS(on)
1
1
100
SINGLE PULSE
R
T
A
θ
JA
= 25
= 280
o
10
C
o
C/W
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C
C
C
rss
10
iss
oss
10 ms
100 ms
1 s
10 ms
1 ms
DC
1000
20
60