DMN2004DWK-7 Diodes Inc, DMN2004DWK-7 Datasheet

MOSFET DUAL N-CHAN 20V SOT-363

DMN2004DWK-7

Manufacturer Part Number
DMN2004DWK-7
Description
MOSFET DUAL N-CHAN 20V SOT-363
Manufacturer
Diodes Inc
Datasheet

Specifications of DMN2004DWK-7

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
550 mOhm @ 540mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
540mA
Vgs(th) (max) @ Id
1V @ 250µA
Input Capacitance (ciss) @ Vds
150pF @ 16V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.55 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.54 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
DMN2004DWKDITR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DMN2004DWK-7
Manufacturer:
Diodes Inc
Quantity:
56 141
Part Number:
DMN2004DWK-7
Manufacturer:
DIODES
Quantity:
300
Part Number:
DMN2004DWK-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
DMN2004DWK-7
0
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 3)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Features
Notes:
DMN2004DWK
Document number: DS30935 Rev. 3 - 2
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected up to 2KV
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
1.
2.
3.
4.
5. Short duration pulse test used to minimize self-heating effect.
No purposefully added lead.
Pulse width ≤10μS, Duty Cycle ≤1%.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB.
Characteristic
ESD protected up to 2kV
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
Steady
State
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
Symbol
R
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BV
V
DS (ON)
C
I
I
|Y
V
C
C
GS(th)
DSS
GSS
SD
oss
DSS
iss
rss
fs
TOP VIEW
|
T
T
A
A
= 25°C
= 85°C
www.diodes.com
Min
200
0.5
0.5
20
CASE
1 of 4
Mechanical Data
Symbol
Symbol
T
V
V
j,
R
Typ
0.4
0.5
0.7
I
P
T
DSS
GSS
I
DM
θ JA
D
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.006 grams (approximate)
d
STG
Internal Schematic
D
S
2
2
TOP VIEW
Max
0.55
0.70
150
1.0
0.9
1.4
±1
25
20
1
G
G
1
2
D
-65 to +150
S
1
1
Value
Value
540
390
200
625
1.5
20
±8
Unit
μA
μA
ms
pF
pF
pF
Ω
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
DMN2004DWK
=10V, I
= 0V, I
= 16V, V
= ±4.5V, V
= V
= 4.5V, I
= 2.5V, I
= 1.8V, I
= 0V, I
= 16V, V
Test Condition
GS
, I
D
S
D
© Diodes Incorporated
D
= 10μA
D
= 115mA
November 2007
Units
Units
D
D
°C/W
GS
GS
= 0.2A
mW
= 250μA
mA
°C
= 540mA
= 500mA
= 350mA
V
V
A
DS
= 0V
= 0V
= 0V

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DMN2004DWK-7 Summary of contents

Page 1

... GS(th) 0.4 ⎯ 0 (ON) 0.7 ⎯ 200 fs ⎯ 0 ⎯ ⎯ C iss ⎯ ⎯ C oss ⎯ ⎯ C rss www.diodes.com DMN2004DWK TOP VIEW Internal Schematic Value Units 20 ±8 540 390 1.5 Value Units 200 mW 625 °C/W -65 to +150 Max Unit Test Condition ⎯ ...

Page 2

... Fig. 3 Gate Threshold Voltage vs. Channel Temperature I , DRAIN CURRENT (A) D Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN2004DWK Document number: DS30935 Rev Fig. 2 Reverse Drain Current vs. Source-Drain Voltage 1 0.1 Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current www.diodes.com DMN2004DWK , GATE-SOURCE VOLTAGE (V) I DRAIN CURRENT ( November 2007 © Diodes Incorporated ...

Page 3

... On-Resistance vs. Drain Current and Gate Voltage I , DRAIN CURRENT (mA) D Fig. 11 Forward Transfer Admittance vs. Drain Current DMN2004DWK Document number: DS30935 Rev JUNCTION TEMPERATURE ( C) j Fig. 8 Static Drain-Source, On-Resistance vs. Temperature 1000 V , DRAIN SOURCE VOLTAGE (V) DS Fig. 12 Capacitance Variation www.diodes.com DMN2004DWK ° November 2007 © Diodes Incorporated ...

Page 4

... Ordering Information (Note 6) Part Number DMN2004DWK-7 Notes: 6. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 2006 Code T Month Jan Feb Code 1 2 Package Outline Dimensions Suggested Pad Layout Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein ...

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