MOSFET N/P-CH 20V 3.0A SSOT-6

 

FDC6420C

Manufacturer Part NumberFDC6420C
DescriptionMOSFET N/P-CH 20V 3.0A SSOT-6
ManufacturerFairchild Semiconductor
SeriesPowerTrench®
FDC6420C datasheets
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Specifications of FDC6420C

Fet TypeN and P-ChannelFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs70 mOhm @ 3A, 4.5VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C3A, 2.2AVgs(th) (max) @ Id1.5V @ 250µA
Gate Charge (qg) @ Vgs4.6nC @ 4.5VInput Capacitance (ciss) @ Vds324pF @ 10V
Power - Max700mWMounting TypeSurface Mount
Package / Case6-SSOT, SuperSOT-6ConfigurationDual
Transistor PolarityN and P-ChannelResistance Drain-source Rds (on)0.07 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)10 S, 6 SDrain-source Breakdown Voltage20 V
Gate-source Breakdown Voltage+/- 12 VContinuous Drain Current3 A @ N Channel or 2.2 A @ P Channel
Power Dissipation960 mWMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesFDC6420C
MMBFJ108_PRODUCT_CHANGE PDF datasheetMMBFJ108_PRODUCT_CHANGE PDF datasheet #2FDC6420C PDF datasheet #3
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Qualification Stress Test and Sample Size Detail
Device #1 FAN2558SX
Package:
TTG23
#Leads:
006
Precondition Description:
Stress
P/C
Standard
PCNL1A
JESD22-A113
Environment Stress Detail:
Stress
P/C
Standard
ACLV
X
JESD22-A102 100%RH, 121C 96
SOPL1
JESD22-A108 NA%RH, 150C
THBT
X
JESD22-A101 85%RH, 85C, 5V 168
TMCL1
X
JESD22-A104 -65C, 150C
Device #2 FDC365P
Package:
TTK23
#Leads:
C06
Precondition Description:
Conditions
Readpoints
Conditions
TP1
TP2
168
500
500
100
500
Read-
Sample
points
A
0
Samples
TP3
A
77
1000
77
1000
77
77
Read-
Sample
points
Pg. 3

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