DMN2004DMK-7 Diodes Inc, DMN2004DMK-7 Datasheet

MOSFET DUAL N-CHAN 20V SOT-26

DMN2004DMK-7

Manufacturer Part Number
DMN2004DMK-7
Description
MOSFET DUAL N-CHAN 20V SOT-26
Manufacturer
Diodes Inc
Datasheet

Specifications of DMN2004DMK-7

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
550 mOhm @ 540mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
540mA
Vgs(th) (max) @ Id
1V @ 250µA
Input Capacitance (ciss) @ Vds
150pF @ 16V
Power - Max
225mW
Mounting Type
Surface Mount
Package / Case
SOT-26
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
DMN2004DMKDITR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DMN2004DMK-7
Manufacturer:
DIODES
Quantity:
132 000
Part Number:
DMN2004DMK-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 3)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Features
Notes:
DMN2004DMK
Document number: DS30937 Rev. 3 - 2
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected up to 2KV
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
1.
2.
3.
4.
5.
Device mounted on FR-4 PCB.
No purposefully added lead.
Pulse width ≤10μS, Duty Cycle ≤1%.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
Characteristic
ESD protected up 2kV
@T
A
= 25°C unless otherwise specified
Characteristic
Characteristic
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Steady
State
TOP VIEW
Symbol
R
BV
V
DS (ON)
I
I
C
|Y
V
C
C
GS(th)
DSS
GSS
oss
SD
rss
DSS
iss
fs
|
www.diodes.com
SOT-26
T
T
Min
200
0.5
0.5
A
A
20
1 of 4
= 25°C
= 85°C
Mechanical Data
Typ
0.4
0.5
0.7
Case: SOT-26
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.015 grams (approximate)
Internal Schematic
S
D
2
2
TOP VIEW
Max
0.55
0.70
150
1.0
0.9
1.4
±1
25
20
1
G
G
1
2
Symbol
Symbol
T
V
V
j,
R
I
P
GSS
T
DSS
I
DM
θ JA
D
d
STG
D
S
1
1
Unit
ms
μA
μA
pF
pF
pF
V
V
Ω
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
-65 to +150
= 16V, V
= 0V, I
= V
=10V, I
= 16V, V
= ±4.5V, V
= 4.5V, I
= 2.5V, I
= 1.8V, I
= 0V, I
Value
Value
540
390
225
556
1.5
GS
20
±8
, I
Test Condition
D
S
D
D
DMN2004DMK
= 10μA
GS
D
D
D
= 115mA
GS
= 0.2A
= 250μA
= 540mA
= 500mA
= 350mA
DS
= 0V
= 0V
= 0V
© Diodes Incorporated
November 2007
Units
Units
°C/W
mW
mA
°C
V
V
A

Related parts for DMN2004DMK-7

DMN2004DMK-7 Summary of contents

Page 1

... GSS ⎯ V 0.5 GS(th) 0.4 ⎯ 0 (ON) 0.7 ⎯ 200 | ⎯ V 0.5 SD ⎯ ⎯ C iss ⎯ ⎯ C oss ⎯ ⎯ C rss www.diodes.com DMN2004DMK TOP VIEW Symbol Value 20 V DSS ±8 V GSS 540 I D 390 1 Symbol Value P 225 d 556 R θ JA -65 to +150 ...

Page 2

... Fig. 3 Gate Threshold Voltage vs. Channel Temperature I , DRAIN CURRENT (A) D Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN2004DMK Document number: DS30937 Rev Fig 0.1 Fig. 4 Static Drain-Source On-Resistance vs. Drain Current www.diodes.com DMN2004DMK V , GATE-SOURCE VOLTAGE (V) GS Reverse Drain Current vs. Source-Drain Voltage I DRAIN CURRENT ( November 2007 © Diodes Incorporated 6 ...

Page 3

... On-Resistance vs. Drain Current and Gate Voltage I , DRAIN CURRENT (mA) D Fig. 11 Forward Transfer Admittance vs. Drain Current DMN2004DMK Document number: DS30937 Rev JUNCTION TEMPERATURE ( C) j Fig. 8 Static Drain-Source, On-Resistance vs. Temperature 1000 V , DRAIN SOURCE VOLTAGE (V) DS Fig. 12 Capacitance Variation www.diodes.com DMN2004DMK ° November 2007 © Diodes Incorporated ...

Page 4

... Ordering Information (Note 6) Part Number DMN2004DMK-7 Notes: 6. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 2006 Code T Month Jan Feb Code 1 2 Package Outline Dimensions A TOP VIEW Suggested Pad Layout Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein ...

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