SI4567DY-T1-E3 Vishay, SI4567DY-T1-E3 Datasheet

MOSFET N/P-CH 40V 8-SOIC

SI4567DY-T1-E3

Manufacturer Part Number
SI4567DY-T1-E3
Description
MOSFET N/P-CH 40V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4567DY-T1-E3

Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 4.1A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
4.1A, 3.6A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
355pF @ 20V
Power - Max
1.85W, 1.95W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.06 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
4.1 A @ N Channel or 3.6 A @ P Channel
Power Dissipation
1850 mW @ N Channel or 1950 mW @ P Channel
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Module Configuration
Dual
Drain Source Voltage Vds
40V
On Resistance Rds(on)
48mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.2V
Power Dissipation Pd
2.75W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4567DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4567DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4567DY-T1-E3
Quantity:
400
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel).
Document Number: 73426
S09-0393-Rev. C, 09-Mar-09
Ordering Information: Si4567DY-T1-E3 (Lead (Pb)-free)
N-Channel
N-Channel
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
C
G
G
S
S
V
1
1
2
2
= 25 °C.
DS
- 40
40
(V)
1
2
3
4
Si4567DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.085 at V
0.122 at V
0.070 at V
0.060 at V
Top View
R
SO-8
J
DS(on)
N- and P-Channel 40-V (D-S) MOSFET
= 150 °C)
b, d
GS
GS
GS
GS
= - 4.5 V
(Ω)
= - 10 V
= 4.5 V
= 10 V
8
7
6
5
D
D
D
D
1
1
2
2
I
D
- 4.4
- 3.7
5.0
4.7
(A)
a
A
= 25 °C, unless otherwise noted
Q
Steady State
g
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
5.6
C
C
C
C
C
A
A
A
A
A
(Typ.)
t ≤ 10 s
6
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Symbol
Symbol
FEATURES
APPLICATIONS
T
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• CCFL Inverter
R
R
J
V
V
E
I
I
I
P
, T
I
DM
SM
thJA
thJF
I
AS
DS
GS
AS
D
S
D
Available
stg
G
1
Typ.
g
57
35
N-Channel MOSFET
N-Channel
Tested
N-Channel
®
1.85
1.18
4.1
3.3
1.5
Power MOSFET
2.75
1.75
4.7
2.3
2.5
40
20
20
5
7
b, c
b, c
b, c
b, c
b, c
D
S
1
1
Max.
67.5
45
- 55 to 150
± 16
Typ.
54
33
P-Channel
P-Channel
G
- 3.6
- 2.9
- 1.6
Vishay Siliconix
1.95
1.25
2
- 4.4
- 3.7
- 2.5
2.95
1.90
- 40
- 20
- 20
7.2
12
P-Channel MOSFET
b, c
b, c
b, c
b, c
b, c
Si4567DY
Max.
64
42
www.vishay.com
S
D
2
2
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for SI4567DY-T1-E3

SI4567DY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4567DY-T1-E3 (Lead (Pb)-free) Si4567DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current ...

Page 2

... Si4567DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... GEN g P-Channel t d(off Ω ≅ 4 GEN ° 1 1 N-Channel dI/dt = 100 A/µ ° P-Channel dI/ 100 A/µ Si4567DY Vishay Siliconix a Min. Typ. Max Ω N-Ch 74 110 P- N-Ch 95 145 P-Ch 93 140 N- P- Ω N-Ch 2.3 P- ...

Page 4

... Si4567DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1.0 1 Drain-to-Source Voltage (V) DS Output Characteristics 0. 0.05 0.04 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 0.0 2.5 5 Total Gate Charge (nC) g Gate Charge www.vishay.com thru ...

Page 5

... 100 125 150 100 Limited DS(on 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4567DY Vishay Siliconix 0. 0.20 0.15 0. 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0.1 ...

Page 6

... Si4567DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 Case Temperature (˚C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Single Pulse 0. Document Number: 73426 S09-0393-Rev. C, 09-Mar-09 Single Pulse - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si4567DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120 °C/W thJA ( ...

Page 8

... Si4567DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.5 1.0 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.20 0. 0.11 0.08 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 0.0 2.5 5 Total Gate Charge (nC) g Gate Charge www ...

Page 9

... I = 250 µ 100 125 150 100 Limited DS(on 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4567DY Vishay Siliconix 0 0.4 0.3 0 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0.1 ...

Page 10

... Si4567DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 11

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73426. Document Number: 73426 S09-0393-Rev. C, 09-Mar-09 Single Pulse - Square W ave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square W ave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si4567DY Vishay Siliconix Notes Duty Cycle Per Unit Base = °C ...

Page 12

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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