SI9933BDY-T1-E3 Vishay, SI9933BDY-T1-E3 Datasheet

MOSFET DUAL P-CH 20V 3.6A 8-SOIC

SI9933BDY-T1-E3

Manufacturer Part Number
SI9933BDY-T1-E3
Description
MOSFET DUAL P-CH 20V 3.6A 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI9933BDY-T1-E3

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 4.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.06 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3.6 A
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI9933BDY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI9933BDY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
37 655
Part Number:
SI9933BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
30 000
Part Number:
SI9933BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Ordering Information:
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
For SPICE model information via the Worldwide Web:
Document Number: 72748
S09-1925-Rev. C, 28-Sep-09
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 20
G
G
(V)
S
S
1
1
2
2
1
2
3
4
Top View
Si9933BDY-T1-E3 (Lead (Pb)-free)
Si9933BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
SO-8
0.06 at V
0.10 at V
R
DS(on)
J
a
= 150 °C)
Dual P-Channel 2.5-V (G-S) MOSFET
GS
GS
a
8
7
6
5
= - 4.5 V
= - 2.5 V
(Ω)
D
D
D
D
1
1
2
2
a
a
A
www.vishay.com/www/product/spice.htm
= 25 °C, unless otherwise noted
I
D
- 4.7
- 3.7
Steady State
Steady State
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
J
Definition
V
V
I
G
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
1
stg
P-Channel MOSFET
S
D
1
1
Typical
- 4.7
- 3.8
- 1.7
10 s
2.0
1.3
55
90
33
- 55 to 150
± 12
- 20
- 20
Steady State
Maximum
G
2
- 3.6
- 2.8
- 0.9
62.5
110
1.1
0.7
40
Vishay Siliconix
P-Channel MOSFET
Si9933BDY
S
D
www.vishay.com
2
2
°C/W
Unit
Unit
°C
W
V
A
1

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SI9933BDY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si9933BDY-T1-E3 (Lead (Pb)-free) Si9933BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si9933BDY Vishay Siliconix SPECIFICATIONS °C unless otherwise noted A Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72748 S09-1925-Rev. C, 28-Sep- 4 °C J 0.8 1.0 1.2 1.4 Si9933BDY Vishay Siliconix 1000 800 C iss 600 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 1 4 1.4 1.2 1.0 ...

Page 4

... Si9933BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on D(on) Limited ° ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72748. Document Number: 72748 S09-1925-Rev. C, 28-Sep- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si9933BDY Vishay Siliconix www.vishay.com 10 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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