MOSFET N-CH DUAL 30V 6.9A 8-SOIC

 

SI4936BDY-T1-E3

Manufacturer Part NumberSI4936BDY-T1-E3
DescriptionMOSFET N-CH DUAL 30V 6.9A 8-SOIC
ManufacturerVishay
SeriesTrenchFET®
SI4936BDY-T1-E3 datasheets

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Specifications of SI4936BDY-T1-E3

Transistor PolarityN-ChannelFet Type2 N-Channel (Dual)
Fet FeatureLogic Level GateRds On (max) @ Id, Vgs35 mOhm @ 5.9A, 10V
Drain To Source Voltage (vdss)30VCurrent - Continuous Drain (id) @ 25° C6.9A
Vgs(th) (max) @ Id3V @ 250µAGate Charge (qg) @ Vgs15nC @ 10V
Input Capacitance (ciss) @ Vds530pF @ 15VPower - Max2W
Mounting TypeSurface MountPackage / Case8-SOIC (3.9mm Width)
Minimum Operating Temperature- 55 CConfigurationDual Dual Drain
Resistance Drain-source Rds (on)0.035 Ohm @ 10 VForward Transconductance Gfs (max / Min)12 S
Drain-source Breakdown Voltage30 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current5.9 APower Dissipation2000 mW
Maximum Operating Temperature+ 150 CMounting StyleSMD/SMT
Continuous Drain Current Id6.9ADrain Source Voltage Vds30V
On Resistance Rds(on)51mohmRds(on) Test Voltage Vgs20V
Threshold Voltage Vgs Typ3VLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesSI4936BDY-T1-E3TR  
show all specifications
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Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
(V)
R
(Ω)
DS
DS(on)
0.035 at V
= 10 V
GS
30
0.051 at V
= 4.5 V
GS
SO-8
S
1
8
1
G
2
7
1
S
3
6
2
G
4
5
2
Top View
Ordering Information:
Si4936BDY -T1-E3
(Lead (Pb)-free)
Si4936BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
= 150 °C)
J
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
a, c
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 110 °C/W.
Document Number: 74469
S09-0767-Rev. B, 04-May-09
FEATURES
• Halogen-free According to IEC 61249-2-21
I
(A)
Q
(Typ.)
D
g
Definition
• TrenchFET
6.9
4.5 nC
• Compliant to RoHS Directive 2002/95/EC
5.7
APPLICATIONS
• Low Current DC/DC Conversion
• Notebook System Power
D
1
D
1
D
2
D
2
G
1
= 25 °C, unless otherwise noted
A
Symbol
V
DS
V
GS
T
= 25 °C
C
T
= 70 °C
C
I
D
T
= 25 °C
A
T
= 70 °C
A
I
DM
T
= 25 °C
C
I
S
T
= 25 °C
A
T
= 25 °C
C
T
= 70 °C
C
P
D
T
= 25 °C
A
T
= 70 °C
A
T
, T
J
stg
Symbol
t ≤ 10 s
R
thJA
R
Steady State
thJF
Si4936BDY
Vishay Siliconix
®
Power MOSFET
D
D
1
2
G
2
S
S
1
2
N-Channel MOSFET
N-Channel MOSFET
Limit
30
± 20
6.9
5.5
a, b
5.9
a, b
4.7
30
2.3
a, b
1.7
2.8
1.8
a, b
2
a, b
1.3
- 55 to 150
Typical
Maximum
58
62.5
38
45
www.vishay.com
Unit
V
A
W
°C
Unit
°C/W
1

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SI4936BDY-T1-E3 Summary of contents

  • Page 1

    ... Top View Ordering Information: Si4936BDY -T1-E3 (Lead (Pb)-free) Si4936BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

  • Page 2

    ... Si4936BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

  • Page 3

    ... Drain Current (A) D On-Resistance vs. Drain Current 5 Total Gate Charge (nC) g Gate Charge Document Number: 74469 S09-0767-Rev. B, 04-May- 2.0 2.5 3 Si4936BDY Vishay Siliconix ° 125 ° 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 800 C 600 iss 400 200 C oss C rss ...

  • Page 4

    ... Si4936BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.6 2 250 µA D 2.2 2.0 1.8 1.6 1 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 75 100 125 150 ...

  • Page 5

    ... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74469 S09-0767-Rev. B, 04-May-09 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4936BDY Vishay Siliconix 3.0 2.5 2.0 1.5 1.0 0.5 0.0 ...

  • Page 6

    ... Si4936BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

  • Page 7

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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