SI4963BDY-T1-E3 Vishay, SI4963BDY-T1-E3 Datasheet

MOSFET P-CH DUAL 20V 4.9A 8-SOIC

SI4963BDY-T1-E3

Manufacturer Part Number
SI4963BDY-T1-E3
Description
MOSFET P-CH DUAL 20V 4.9A 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4963BDY-T1-E3

Transistor Polarity
P-Channel
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
32 mOhm @ 6.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 4.5V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.032 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.9 A
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
6.5A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
-1.4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4963BDY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4963BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 974
Part Number:
SI4963BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
Document Number: 72753
S09-0704-Rev. B, 27-Apr-09
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 20
(V)
G
G
S
S
1
1
2
2
1
2
3
4
Si4963BDY -T1-E3
Si4963BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
0.032 at V
0.050 at V
SO-8
R
DS(on)
J
a
= 150 °C)
Dual P-Channel 2.5-V (G-S) MOSFET
a
GS
GS
8
7
6
5
= - 4.5 V
= - 2.5 V
(Ω)
(Lead (Pb)-free)
D
D
D
D
a
1
1
2
2
a
A
= 25 °C, unless otherwise noted
I
Steady State
Steady State
D
- 6.5
- 5.2
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
G
T
R
R
Definition
J
1
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
P-Channel MOSFET
stg
S
D
1
1
Typical
10 s
- 6.5
- 5.2
- 1.7
2.0
1.3
58
91
34
- 55 to 150
± 12
- 20
- 40
Steady State
G
Maximum
2
- 4.9
- 3.9
- 0.9
62.5
P-Channel MOSFET
110
1.1
0.7
40
Vishay Siliconix
Si4963BDY
S
D
2
2
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4963BDY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4963BDY -T1-E3 (Lead (Pb)-free) Si4963BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4963BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Gate Charge 150 ° 0.0 0.3 0.6 V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72753 S09-0704-Rev. B, 27-Apr- °C J 0.9 1.2 1.5 Si4963BDY Vishay Siliconix 2000 1600 C iss 1200 800 C oss 400 C rss – Drain-to-Source Voltage (V) DS Capacitance ...

Page 4

... Si4963BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 0.5 0.4 0 250 µA D 0.2 0.1 0.0 - 0 – Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on) ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72753. Document Number: 72753 S09-0704-Rev. B, 27-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4963BDY Vishay Siliconix www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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