FDMS9600S Fairchild Semiconductor, FDMS9600S Datasheet
FDMS9600S
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FDMS9600S Summary of contents
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... Thermal Resistance, Junction to Case θJC Package Marking and Ordering Information Device Marking Device FDMS9600S FDMS9600S ©2008 Fairchild Semiconductor Corporation FDMS9600S Rev.D1 ® MOSFET General Description This device includes two specialized MOSFETs in a unique dual Power 56 package. = 12A D Synchronous Buck power stage in terms of efficiency and PCB ...
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... Rise Time r t Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g(TOT) Q Gate to Source Gate Charge gs Q Gate to Drain “Miller” Charge gd FDMS9600S Rev. 25°C unless otherwise noted J Test Conditions I = 250µ 1mA 250µA, referenced to 25° 1mA, referenced to 25° ...
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... SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes determined with the device mounted on a 1in θJA the user's board design. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. FDMS9600S Rev. 25°C unless otherwise noted J Test Conditions 2.1A (Note 0V ...
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... JUNCTION TEMPERATURE J Figure 3. Normalized On-Resistance vs Junction Temperature 60 PULSE DURATION = 300 s µ DUTY CYCLE = 2.0%MAX =125 1.0 1.5 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMS9600S Rev. 25°C unless otherwise noted J PULSE DURATION = 300 s µ DUTY CYCLE = 2.0%MAX 1.5 2.0 75 100 125 150 ...
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... DRAIN to SOURCE VOLTAGE (V) DS Figure 9. Forward Bias Safe Operating Area 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE 0.002 - FDMS9600S Rev. 25°C unless otherwise noted J 2000 1000 V = 15V DD 100 300 100 1ms 10ms 10 100ms 1s 10s DC 0 ...
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... T , JUNCTION TEMPERATURE J Figure 14. Normalized On-Resistance vs Junction Temperature 60 PULSE DURATION = 300 s µ DUTY CYCLE = 2.0%MAX =125 1.0 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 16. Transfer Characteristics FDMS9600S Rev. µ 0.6 0.8 1.0 Figure 13. Normalized on-Resistance vS Drain 75 100 125 150 0. - 1E-3 3.0 3 ...
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... Typical Characteristics 16A =10V GATE CHARGE(nC) g Figure 18. Gate Charge Characteristics FDMS9600S Rev. 15V DD = 20V 5000 1000 f = 1MHz 100 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 19. Capacitance vs Drain to Source Voltage C iss C oss C rss 30 10 www.fairchildsemi.com ...
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... Dimensional Outline and Pad Layout FDMS9600S Rev.D1 8 www.fairchildsemi.com ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...