SP8K1TB Rohm Semiconductor, SP8K1TB Datasheet
SP8K1TB
Specifications of SP8K1TB
SP8K1TBTR
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SP8K1TB Summary of contents
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Transistors Switching (30V, 5.0A) SP8K1 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). Application Power switching converter. Structure Silicon N-channel MOS FET Absolute maximum ratings (Ta=25° the ...
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Transistors Electrical characteristics (Ta=25° the same characteristics for the Tr. 1 and Tr. 2. Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS ...
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Transistors Electrical characteristic curves 1000 1MHz iss 100 C oss C rss 10 0.01 0 100 DRAIN-SOURCE VOLTAGE : V (V) DS Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 V ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...