SP8K3TB Rohm Semiconductor, SP8K3TB Datasheet

MOSFET 2N-CH 30V 7A 8-SOIC

SP8K3TB

Manufacturer Part Number
SP8K3TB
Description
MOSFET 2N-CH 30V 7A 8-SOIC
Manufacturer
Rohm Semiconductor
Datasheet
1.SP8K3TB.pdf (4 pages)

Specifications of SP8K3TB

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
11.8nC @ 5V
Input Capacitance (ciss) @ Vds
600pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP8K3TB
SP8K3TBTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
SP8K3TB
Manufacturer:
ROHM
Quantity:
166
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
SP8K3TB
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Company:
Allchip Electronic(HK) Limited Allchip Electronic(HK) Limited
Part Number:
SP8K3TB
Manufacturer:
ROHM
Quantity:
3 746
Transistors
Switching (30V, 7.0A)
SP8K3
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
Power switching, DC / DC converter.
Silicon N-channel
MOS FET
It is the same ratings for the Tr. 1 and Tr. 2.
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
Channel to ambient
1 Pw 10 s, Duty cycle 1%
2 MOUNTED ON A CERAMIC BOARD.
MOUNTED ON A CERAMIC BOARD.
Features
Application
Structure
Absolute maximum ratings (Ta=25°C)
Thermal resistance (Ta=25°C)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
V
Tstg
Tch
I
I
P
I
DSS
GSS
DP
I
SP
D
S
D
Rth (ch-a)
Symbol
55 to 150
Limits
150
1.6
6.4
30
20
7.0
28
2
Limits
62.5
Unit
W
V
V
A
A
A
A
C
C
External dimensions (Unit : mm)
SOP8
1
1
2
C / W
Unit
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Equivalent circuit
1 ESD PROTECTION DIODE
2 BODY DIODE
2
1.27
5.0 0.2
(8)
(1)
1
0.1
0.4 0.1
(7)
(2)
Each lead has same dimensions
2
(6)
(3)
0.2 0.1
1
(5)
(4)
(1) (2) (3) (4)
(8) (7) (6) (5)
SP8K3
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
1/3

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SP8K3TB Summary of contents

Page 1

Transistors Switching (30V, 7.0A) SP8K3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). Application Power switching converter. Structure Silicon N-channel MOS FET Absolute maximum ratings (Ta=25° the ...

Page 2

Transistors Electrical characteristics (Ta=25° the same characteristics for the Tr. 1 and Tr. 2. Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS ...

Page 3

Transistors Electrical characteristic curves 10000 1MHz 1000 C iss C oss 100 C rss 10 0.01 0 100 DRAIN-SOURCE VOLTAGE : V (V) DS Fig.1 Typical Capacitance vs. Drain-Source Voltage 100 ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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