IRF7509TRPBF International Rectifier, IRF7509TRPBF Datasheet

MOSFET N/P-CH 30V MICRO8

IRF7509TRPBF

Manufacturer Part Number
IRF7509TRPBF
Description
MOSFET N/P-CH 30V MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7509TRPBF

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 1.7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.7A, 2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
210pF @ 25V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
Micro8™
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
175 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
2.4 A
Power Dissipation
1.25 W
Gate Charge Qg
7.8 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7509TRPBF
IRF7509TRPBFTR
Generation V Technology
l
Ultra Low On-Resistance
l
Dual N and P Channel MOSFET
l
Very Small SOIC Package
l
Low Profile (<1.1mm)
l
Available in Tape & Reel
l
Fast Switching
l
Lead-Free
l
Description
Fifth
Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Parameter
V
Drain-Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
Maximum Power Dissipation
D
A
P
@T
= 70°C
Maximum Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
V
Gate-to-Source Voltage Single Pulse tp<10µS
GSM
dv/dt
Peak Diode Recovery dv/dt
T
, T
Junction and Storage Temperature Range
J
STG
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
θJA
www.irf.com
HEXFET
N-CHANNEL MOSFET
1
8
S1
2
7
G1
3
6
S2
4
5
G2
P-CHANNEL MOSFET
Top View
N-Channel
30
2.7
GS
2.1
GS

21
®
Power MOSFET
N-Ch
P-Ch
D1
D1
DSS
D2
D2
DS(on)
Micro8
Max.
Units
P-Channel
-30
V
-2.0
-1.6
A
-16
1.25
W
0.8
W
10
mW/°C
± 20
V
30
V
5.0
V/ns
-55 to + 150
°C
240 (1.6mm from case)
Max.
Units
100
°C/W
1

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IRF7509TRPBF Summary of contents

Page 1

... Lead-Free l Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

J DS(ON) GS(th) fs DSS GSS d(on) r d(off) f iss oss rss Notes:  ‚ ≤ ≤ N-Channel I SD ≤ ≤ P-Channel ...

Page 3

VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3. 3.0V 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T = 25°C ...

Page 4

ID = 2.7A 0.100 0.080 0.060 Gate-to-Source Voltage (V) GS Fig 7. Typical On-Resistance Vs. Gate Voltage 400 1MHz ...

Page 5

VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 1 -3.0V 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage (V) DS Fig 11. ...

Page 6

Gate to Source Voltage (V) Fig 17. Typical On-Resistance Vs. Gate Voltage 400 1MHz ...

Page 7

Micro8 Package Outline Dimensions are shown in milimeters (inches 0.08 (.003) ...

Page 8

Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. NOTES : ...

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