IRF7509TRPBF International Rectifier, IRF7509TRPBF Datasheet

IRF7509TRPBF

Manufacturer Part Number

IRF7509TRPBF

Description

MOSFET N/P-CH 30V MICRO8

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7509TRPBF.pdf (8 pages)

Specifications of IRF7509TRPBF

Fet Type

N and P-Channel

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

110 mOhm @ 1.7A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

2.7A, 2A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

12nC @ 10V

Input Capacitance (ciss) @ Vds

210pF @ 25V

Power - Max

1.25W

Mounting Type

Surface Mount

Package / Case

Micro8™

Transistor Polarity

N and P-Channel

Resistance Drain-source Rds (on)

175 mOhms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

2.4 A

Power Dissipation

1.25 W

Gate Charge Qg

7.8 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF7509TRPBF
IRF7509TRPBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7509TRPBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRF7509TRPBF

Quantity:

9 000

Company:

H&T Electronics

Part Number:

IRF7509TRPBF

Quantity:

8 000

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Description

Fifth

processing techniques to achieve extremely low on-resistance per silicon

area. This benefit, combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for use in a wide variety

of applications.

The new Micro8 package, with half the footprint area of the standard SO-8,

provides the smallest footprint available in an SOIC outline. This makes the

Micro8 an ideal device for applications where printed circuit board space is at

a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into

extremely thin application environments such as portable electronics and

PCMCIA cards.

Thermal Resistance

www.irf.com

dv/dt

GSM

θJA

@ T

, T

Generation V Technology

Ultra Low On-Resistance

Dual N and P Channel MOSFET

Very Small SOIC Package

Low Profile (<1.1mm)

Available in Tape & Reel

Fast Switching

Lead-Free

STG

Generation HEXFETs from International Rectifier utilize advanced

= 25°C

= 70°C

= 25°C

= 70°C

Drain-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Soldering Temperature, for 10 seconds

Maximum Junction-to-Ambient

Linear Derating Factor

Gate-to-Source Voltage Single Pulse tp<10µS

Gate-to-Source Voltage

Parameter

„

‚

„

N-CHANNEL MOSFET

P-CHANNEL MOSFET

Top View

N-Channel

2.7

2.1

HEXFET

240 (1.6mm from case)

-55 to + 150

Max.

100

Max.

± 20

1.25

0.8

5.0

DS(on)

DSS

P-Channel

Power MOSFET

-30

-2.0

-1.6

-16

Micro8

N-Ch

Ω

mW/°C

Units

P-Ch

°C/W

V/ns

°C

Ω

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IRF7509TRPBF Summary of contents

Page 1

... Lead-Free l Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

J DS(ON) GS(th) fs DSS GSS d(on) r d(off) f iss oss rss Notes: ‚ ≤ ≤ N-Channel I SD ≤ ≤ P-Channel ...

Page 3

VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3. 3.0V 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T = 25°C ...

Page 4

ID = 2.7A 0.100 0.080 0.060 Gate-to-Source Voltage (V) GS Fig 7. Typical On-Resistance Vs. Gate Voltage 400 1MHz ...

Page 5

VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 1 -3.0V 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage (V) DS Fig 11. ...

Page 6

Gate to Source Voltage (V) Fig 17. Typical On-Resistance Vs. Gate Voltage 400 1MHz ...

Page 7

Micro8 Package Outline Dimensions are shown in milimeters (inches 0.08 (.003) ...

Page 8

Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. NOTES : ...

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