IRF7509TRPBF International Rectifier, IRF7509TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7509TRPBF
• Description: MOSFET N/P-CH 30V MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7509TRPBF

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.7A, 2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 210pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 175 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 1.25 W
• Gate Charge Qg: 7.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7509TRPBF; IRF7509TRPBFTR

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Fig 11. Typical Output Characteristics
Fig 13. Typical Transfer Characteristics
2.0
1.5
1.0
0.5
0.0
0.1
0.1
10
10
1
1
Fig 15. Normalized On-Resistance
-60
0.1
3.0
TOP
BOTTOM - 3.0V
I
D
-40
= -1.2A
-V
T , Junction Temperature (°C)
-V
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
-20
J
VGS
DS
GS
T = 25°C
J
4.0
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
0
Vs. Temperature
20
T = 150°C
40
J
5.0
1
60
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
80
-3.0V
= -10V
100 120 140 160
6.0
V
GS
= -10V
7.0
10
A
A
A
Fig 16. Typical On-Resistance Vs. Drain
Fig 12. Typical Output Characteristics
Fig 14. Typical Source-Drain Diode
0.1
0.1
10
1.5
1.
10
1
.5
.
1
0.4
0.1
TOP
BOTTOM - 3.0V
T = 150°C
J
-V
-V
Forward Voltage
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
0.6
SD
VGS
DS
1
Current
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
I
, Drain Current (A)
0.8
T = 25°C
2
1
J
20µs PULSE WIDTH
T = 150°C
1.0
J
VGS = -10V
VGS = -4.5V
-3.0V
3
1.2
V
GS
= 0V
1.4
10
4
A
A
5