IRF7501TRPBF International Rectifier, IRF7501TRPBF Datasheet

MOSFET N-CH DUAL 20V 2.4A MICRO8

IRF7501TRPBF

Manufacturer Part Number
IRF7501TRPBF
Description
MOSFET N-CH DUAL 20V 2.4A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7501TRPBF.pdf (9 pages)

Specifications of IRF7501TRPBF

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
135 mOhm @ 1.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.4A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 4.5V
Input Capacitance (ciss) @ Vds
260pF @ 15V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
Micro8™
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
135 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
2.4 A
Power Dissipation
1.2 W
Gate Charge Qg
5.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7501TRPBF
IRF7501TRPBFTR
Q2235500
Q3145294

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF7501TRPBF
Manufacturer:
International Rectifier
Quantity:
29 387
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7501TRPBF
Manufacturer:
IR
Quantity:
20 000
l
l
l
l
l
l
l
l
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is
at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable electronics and
PCMCIA cards.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
V
I
I
I
P
P
V
V
dv/dt
TJ , TSTG
R
only for product marked with Date Code 505 or later .
D
D
DM
GS
DS
D
D
GSM
θJA
@ T
@ T
Generation V Technology
Ulrtra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Lead-Free
@T
@T
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Maximum Power Dissipation„
Maximum Power Dissipation „
Linear Derating Factor
Gate-to-Source Voltage Single Pulse tp<10µs
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Maximum Junction-to-Ambient „
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G2
G1
S2
S1
1
2
3
4
Top View
HEXFET
240 (1.6mm from case)
IRF7501PbF
8
6
5
7
-55 to + 150
D1
D1
D2
D2
Max.
Max.
100
1.25
0.01
± 12
2.4
1.9
0.8
5.0
20
19
16
®
R
Power MOSFET
DS(on)
V
DSS
Micro8
PD - 95345
= 0.135Ω
=20V
Units
Units
W/°C
°C/W
V/ns
°C
W
W
V
A
V
V
02/22/05
1

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IRF7501TRPBF Summary of contents

Page 1

... Lead-Free l Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRF7501PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V 10 BOTTOM 1.5V 1 0.1 1.5V 20µs PULSE WIDTH T = 25°C J 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 10 T ...

Page 4

IRF7501PbF 2 1.7A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature (°C) J Fig 5. Normalized On-Resistance Vs. Temperature 0.13 0.11 0.09 0.07 0.05 4 0.8 0.6 0.4 0.2 V ...

Page 5

1MHz iss rss oss ds gd 400 C iss 300 C oss 200 C rss ...

Page 6

IRF7501PbF Charge Fig 11a. Basic Gate Charge Waveform Fig 12a. Switching Time Test Circuit V DS 90% 10 Fig 12b. Switching Time Waveforms 6 12V V GS Fig 11b. Gate ...

Page 7

Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple ≤ 5% www.irf.com • • • - ...

Page 8

IRF7501PbF Micro8 Package Outline Dimensions are shown in milimeters (inches 0.25 (.010 ...

Page 9

Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. NOTES : ...

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