MOSFET P-CH DUAL 20V 4.3A MICRO8

IRF7555TRPBF

Manufacturer Part NumberIRF7555TRPBF
DescriptionMOSFET P-CH DUAL 20V 4.3A MICRO8
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7555TRPBF datasheet
 


Specifications of IRF7555TRPBF

Fet Type2 P-Channel (Dual)Fet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs55 mOhm @ 4.3A, 4.5VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C4.3AVgs(th) (max) @ Id1.2V @ 250µA
Gate Charge (qg) @ Vgs15nC @ 5VInput Capacitance (ciss) @ Vds1066pF @ 10V
Power - Max1.25WMounting TypeSurface Mount
Package / CaseMicro8™Channel TypeP
Current, Drain–4.3 APackage TypeMICRO-8
PolarizationP-ChannelPower Dissipation1.2 W
Resistance, Drain To Source On0.055 OhmResistance, Thermal, Junction To Case100 °C/W
Temperature, Operating, Minimum-55 °CVoltage, Drain To Source–20 V
Voltage, Gate To Source±12 VConfigurationDual
Transistor PolarityDual P-ChannelResistance Drain-source Rds (on)105 mOhms
Drain-source Breakdown Voltage- 20 VGate-source Breakdown Voltage12 V
Continuous Drain Current- 4.3 AGate Charge Qg10 nC
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesIRF7555TRPBF
IRF7555TRPBFTR
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Trench Technology
l
Ultra Low On-Resistance
l
Dual P-Channel MOSFET
l
Very Small SOIC Package
l
Low Profile (<1.1mm)
l
Available in Tape & Reel
l
Lead-Free
l
Description
®
New trench HEXFET
power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8™ package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
Parameter
V
Drain-Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
Maximum Power Dissipation
D
A
P
@T
= 70°C
Maximum Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy„
AS
dv/dt
Peak Diode Recovery dv/dt
T
, T
Junction and Storage Temperature Range
J
STG
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
θJA
www.irf.com
HEXFET
1
S1
2
G1
3
S2
4
G2
Top View
@ -4.5V
GS
@ -4.5V
GS

Max.
IRF7555PbF
®
Power MOSFET
8
D1
V
= -20V
DSS
7
D1
6
D2
5
D2
R
= 0.055Ω
DS(on)
Max.
Units
-20
V
-4.3
-3.4
A
-34
1.25
W
0.8
W
10
mW/°C
± 12
V
36
mJ
1.1
V/ns
-55 to + 150
°C
240 (1.6mm from case)
Units
100
°C/W
1

IRF7555TRPBF Summary of contents

  • Page 1

    Trench Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Lead-Free l Description ® New trench HEXFET power MOSFETs from International Rectifier utilize advanced ...

  • Page 2

    IRF7555PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

  • Page 3

    VGS TOP -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V 10 1 -1.50V 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T = ...

  • Page 4

    IRF7555PbF 1600 1MHz iss rss oss ds gd 1200 C iss 800 400 C oss C rss ...

  • Page 5

    T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) ...

  • Page 6

    IRF7555PbF Charge Fig 12a. Basic Gate Charge Waveform Fig 13a. Switching Time Test Circuit V GS 10% 90 Fig 13b. Switching Time Waveforms 6 Current Regulator Same Type as D.U.T. ...

  • Page 7

    Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple ≤ www.irf.com • • • ...

  • Page 8

    IRF7555PbF Micro8 Package Outline Dimensions are shown in milimeters (inches 0.25 (.010 ...

  • Page 9

    Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. NOTES : ...