IRF7555TRPBF International Rectifier, IRF7555TRPBF Datasheet
IRF7555TRPBF
Specifications of IRF7555TRPBF
IRF7555TRPBFTR
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IRF7555TRPBF Summary of contents
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Trench Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Lead-Free l Description ® New trench HEXFET power MOSFETs from International Rectifier utilize advanced ...
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IRF7555PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...
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VGS TOP -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V 10 1 -1.50V 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T = ...
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IRF7555PbF 1600 1MHz iss rss oss ds gd 1200 C iss 800 400 C oss C rss ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) ...
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IRF7555PbF Charge Fig 12a. Basic Gate Charge Waveform Fig 13a. Switching Time Test Circuit V GS 10% 90 Fig 13b. Switching Time Waveforms 6 Current Regulator Same Type as D.U.T. ...
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Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple ≤ www.irf.com • • • ...
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IRF7555PbF Micro8 Package Outline Dimensions are shown in milimeters (inches 0.25 (.010 ...
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Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. NOTES : ...