IRF7555TRPBF International Rectifier, IRF7555TRPBF Datasheet

MOSFET P-CH DUAL 20V 4.3A MICRO8

IRF7555TRPBF

Manufacturer Part Number
IRF7555TRPBF
Description
MOSFET P-CH DUAL 20V 4.3A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7555TRPBF

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
55 mOhm @ 4.3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
1066pF @ 10V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
Micro8™
Channel Type
P
Current, Drain
–4.3 A
Package Type
MICRO-8
Polarization
P-Channel
Power Dissipation
1.2 W
Resistance, Drain To Source On
0.055 Ohm
Resistance, Thermal, Junction To Case
100 °C/W
Temperature, Operating, Minimum
-55 °C
Voltage, Drain To Source
–20 V
Voltage, Gate To Source
±12 V
Configuration
Dual
Transistor Polarity
Dual P-Channel
Resistance Drain-source Rds (on)
105 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 4.3 A
Gate Charge Qg
10 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7555TRPBF
IRF7555TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7555TRPBF
Manufacturer:
IR
Quantity:
20 000
l
l
l
l
l
l
l
Description
Thermal Resistance
New trench HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8™ package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
www.irf.com
V
I
I
I
P
P
V
E
dv/dt
T
R
D
D
DM
Lead-Free
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Available in Tape & Reel
Trench Technology
Low Profile (<1.1mm)
J
DS
D
D
GS
AS
θJA
@ T
@ T
, T
@T
@T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Parameter
Maximum Junction-to-Ambient
Soldering Temperature, for 10 seconds
Linear Derating Factor
®
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
power MOSFETs from International
Parameter

GS
GS
@ -4.5V
@ -4.5V
Max.
G2
G1
S2
S1
1
2
3
4
Top View
HEXFET
240 (1.6mm from case)
8
7
6
5
IRF7555PbF
-55 to + 150
D1
D1
D2
D2
100
Max.
1.25
-4.3
-3.4
Units
-20
-34
0.8
1.1
36
10
± 12
®
R
Power MOSFET
DS(on)
V
DSS
= 0.055Ω
= -20V
mW/°C
Units
V/ns
°C/W
mJ
°C
W
W
V
A
V
1

Related parts for IRF7555TRPBF

IRF7555TRPBF Summary of contents

Page 1

Trench Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Lead-Free l Description ® New trench HEXFET power MOSFETs from International Rectifier utilize advanced ...

Page 2

IRF7555PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V 10 1 -1.50V 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T = ...

Page 4

IRF7555PbF 1600 1MHz iss rss oss ds gd 1200 C iss 800 400 C oss C rss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) ...

Page 6

IRF7555PbF Charge Fig 12a. Basic Gate Charge Waveform Fig 13a. Switching Time Test Circuit V GS 10% 90 Fig 13b. Switching Time Waveforms 6 Current Regulator Same Type as D.U.T. ...

Page 7

Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple ≤ www.irf.com • • • ...

Page 8

IRF7555PbF Micro8 Package Outline Dimensions are shown in milimeters (inches 0.25 (.010 ...

Page 9

Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. NOTES : ...

Related keywords