IRF7555TRPBF International Rectifier, IRF7555TRPBF Datasheet - Page 2
IRF7555TRPBF
Manufacturer Part Number
IRF7555TRPBF
Description
MOSFET P-CH DUAL 20V 4.3A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7555TRPBF.pdf
(9 pages)
Specifications of IRF7555TRPBF
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
55 mOhm @ 4.3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
1066pF @ 10V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
Micro8™
Channel Type
P
Current, Drain
–4.3 A
Package Type
MICRO-8
Polarization
P-Channel
Power Dissipation
1.2 W
Resistance, Drain To Source On
0.055 Ohm
Resistance, Thermal, Junction To Case
100 °C/W
Temperature, Operating, Minimum
-55 °C
Voltage, Drain To Source
–20 V
Voltage, Gate To Source
±12 V
Configuration
Dual
Transistor Polarity
Dual P-Channel
Resistance Drain-source Rds (on)
105 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 4.3 A
Gate Charge Qg
10 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7555TRPBF
IRF7555TRPBFTR
IRF7555TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7555TRPBF
Manufacturer:
IR
Quantity:
20 000
Notes:
Electrical Characteristics @ T
IRF7555PbF
Source-Drain Ratings and Characteristics
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
d(on)
d(off)
r
f
SM
DSS
S
rr
fs
(BR)DSS
GS(th)
GSS
2
iss
oss
rss
SD
g
gs
gd
Repetitive rating; pulse width limited by
I
DS(on)
rr
max. junction temperature.
(BR)DSS
SD
J
≤
≤
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
≤
≤
Parameter
Parameter
DD
≤
≤
(BR)DSS
J
= 25°C (unless otherwise specified)
-0.60 –––
Min. Typ. Max. Units
Min. Typ. Max. Units
––– -0.005 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1066 –––
–––
–––
–––
–––
-20
2.5
–––
–––
––– 0.055
––– 0.105
–––
–––
–––
––– -100
–––
402
126
–––
2.1
2.5
10
10
46
60
64
54
41
Surface mounted on FR-4 board, ≤ 10sec
R
Starting T
G
-1.2
-1.0
–––
–––
–––
100
–––
–––
–––
–––
–––
-25
-1.2
= 25Ω, I
3.1
3.7
-34
15
82
61
1.3
V/°C
J
nC
pF
nC
ns
= 25°C, L = 8.0mH
V
Ω
V
S
AS
V
= -3.0A.
ƒ = 1.0MHz
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= -3.0A
= -2.0A
= 25°C, I
= 25°C, I
= 5.0Ω
= 6.0Ω
= V
= -10V
= -10V
= 0V, I
= -4.5V, I
= -2.5V, I
= -10V, I
= -16V, V
= -16V, V
= -12V
= 12V
= -5.0V
= -10V
= 0V
GS
Conditions
, I
D
S
F
D
= -250µA
Conditions
D
D
D
= -1.6A, V
= -2.5A
GS
= -250µA
GS
= -0.8A
= -4.3A
= -3.4A
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
= 125°C
G
= 0V
S
D