IRF7555TRPBF International Rectifier, IRF7555TRPBF Datasheet - Page 2

MOSFET P-CH DUAL 20V 4.3A MICRO8

IRF7555TRPBF

Manufacturer Part Number
IRF7555TRPBF
Description
MOSFET P-CH DUAL 20V 4.3A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7555TRPBF

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
55 mOhm @ 4.3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
1066pF @ 10V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
Micro8™
Channel Type
P
Current, Drain
–4.3 A
Package Type
MICRO-8
Polarization
P-Channel
Power Dissipation
1.2 W
Resistance, Drain To Source On
0.055 Ohm
Resistance, Thermal, Junction To Case
100 °C/W
Temperature, Operating, Minimum
-55 °C
Voltage, Drain To Source
–20 V
Voltage, Gate To Source
±12 V
Configuration
Dual
Transistor Polarity
Dual P-Channel
Resistance Drain-source Rds (on)
105 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 4.3 A
Gate Charge Qg
10 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7555TRPBF
IRF7555TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7555TRPBF
Manufacturer:
IR
Quantity:
20 000

Notes:
ƒ
Electrical Characteristics @ T
IRF7555PbF
Source-Drain Ratings and Characteristics
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
d(on)
d(off)
r
f
SM
DSS
S
rr
fs
(BR)DSS
GS(th)
GSS
2
iss
oss
rss
SD
g
gs
gd
Repetitive rating; pulse width limited by
I
DS(on)
rr
max. junction temperature.
(BR)DSS
SD
J
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
DD
(BR)DSS
J
= 25°C (unless otherwise specified)
-0.60 –––
Min. Typ. Max. Units
Min. Typ. Max. Units
––– -0.005 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1066 –––
–––
–––
–––
–––
-20
2.5
–––
–––
––– 0.055
––– 0.105
–––
–––
–––
––– -100
–––
402
126
–––
2.1
2.5
10
10
46
60
64
54
41
Surface mounted on FR-4 board, ≤ 10sec
R
Starting T
G
-1.2
-1.0
–––
–––
–––
100
–––
–––
–––
–––
–––
-25
-1.2
= 25Ω, I
3.1
3.7
-34
15
82
61
1.3
V/°C
J
nC
pF
nC
ns
= 25°C, L = 8.0mH
V
V
S
AS
V
= -3.0A.
ƒ = 1.0MHz
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= -3.0A
= -2.0A
= 25°C, I
= 25°C, I
= 5.0Ω
= 6.0Ω
= V
= -10V
= -10V
= 0V, I
= -4.5V, I
= -2.5V, I
= -10V, I
= -16V, V
= -16V, V
= -12V
= 12V
= -5.0V
= -10V
= 0V
GS
Conditions
, I
ƒ
D
S
F
D
= -250µA
Conditions
D
D
D
= -1.6A, V
= -2.5A
GS
= -250µA
GS
= -0.8A
= -4.3A
= -3.4A
ƒ
= 0V
= 0V, T
D
www.irf.com
= -1mA
ƒ
ƒ
GS
J
= 125°C
G
= 0V
ƒ
S
D

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