IRF7555TRPBF International Rectifier, IRF7555TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7555TRPBF
• Description: MOSFET P-CH DUAL 20V 4.3A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7555TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 1066pF @ 10V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Channel Type: P
• Current, Drain: –4.3 A
• Package Type: MICRO-8
• Polarization: P-Channel
• Power Dissipation: 1.2 W
• Resistance, Drain To Source On: 0.055 Ohm
• Resistance, Thermal, Junction To Case: 100 °C/W
• Temperature, Operating, Minimum: -55 °C
• Voltage, Drain To Source: –20 V
• Voltage, Gate To Source: ±12 V
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Resistance Drain-source Rds (on): 105 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 4.3 A
• Gate Charge Qg: 10 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7555TRPBF; IRF7555TRPBFTR

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100
100
Fig 3. Typical Transfer Characteristics
0.1
Fig 1. Typical Output Characteristics
10
10
1
1
0.1
1.0
TOP
BOTTOM
-V
-V
DS
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
-1.50V
GS
, Drain-to-Source Voltage (V)
2.0
, Gate-to-Source Voltage (V)
T = 25 C
1
J
-1.50V
°
3.0
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
T = 150 C
10
J
= -15V
4.0
°
°
100
5.0
100
0.1
10
Fig 2. Typical Output Characteristics
1
2.0
1.5
1.0
0.5
0.0
0.1
-60 -40 -20
Fig 4. Normalized On-Resistance
TOP
BOTTOM
I =
D
-V
-4.3A
DS
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
-1.50V
T , Junction Temperature ( C)
, Drain-to-Source Voltage (V)
J
Vs. Temperature
0
1
IRF7555PbF
20 40 60 80 100 120 140 160
-1.50V
20µs PULSE WIDTH
T = 150 C
J
10
°
V
°
GS
=
-4.5V
100
3