IRF7555TRPBF International Rectifier, IRF7555TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7555TRPBF
• Description: MOSFET P-CH DUAL 20V 4.3A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7555TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 1066pF @ 10V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Channel Type: P
• Current, Drain: –4.3 A
• Package Type: MICRO-8
• Polarization: P-Channel
• Power Dissipation: 1.2 W
• Resistance, Drain To Source On: 0.055 Ohm
• Resistance, Thermal, Junction To Case: 100 °C/W
• Temperature, Operating, Minimum: -55 °C
• Voltage, Drain To Source: –20 V
• Voltage, Gate To Source: ±12 V
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Resistance Drain-source Rds (on): 105 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 4.3 A
• Gate Charge Qg: 10 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7555TRPBF; IRF7555TRPBFTR

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Re-Applied
Voltage
Reverse
Recovery
Current
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
GS
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
Diode Recovery
SD
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
IRF7555PbF
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