IRF7103TRPBF International Rectifier, IRF7103TRPBF Datasheet

MOSFET N-CH 50V 3A 8-SOIC

IRF7103TRPBF

Manufacturer Part Number
IRF7103TRPBF
Description
MOSFET N-CH 50V 3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets
1.IRF7103TRPBF.pdf (9 pages)
2.IRF7103TRPBF.pdf (10 pages)
3.IRF7103TRPBF.pdf (9 pages)

Specifications of IRF7103TRPBF

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
290pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
N
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.13Ohm
Drain-source On-volt
50V
Gate-source Voltage (max)
±20V
Continuous Drain Current
3A
Power Dissipation
2W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
200 mOhms
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
20 V
Mounting Style
SMD/SMT
Gate Charge Qg
12 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7103PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF7103TRPBF
Manufacturer:
IR
Quantity:
24 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF7103TRPBF
Manufacturer:
International Rectifier
Quantity:
215 449
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
IRF7103TRPBF
Manufacturer:
ST
0
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7103TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Amily Shenzhen XNWY Technology Co., Ltd Amily Shenzhen XNWY Technology Co., Ltd
Part Number:
IRF7103TRPBF
0
Company:
H&T Electronics H&T Electronics
Part Number:
IRF7103TRPBF
Quantity:
80
Company:
H&T Electronics H&T Electronics
Part Number:
IRF7103TRPBF
Quantity:
9 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRF7103TRPBF
Quantity:
56 000
Benefits
Description
Specifically designed for Automotive applications, these
HEXFET
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
Absolute Maximum Ratings
Thermal Resistance
Typical Applications
l
l
l
l
l
l
l
l
l
l
I
I
I
P
V
E
I
E
dv/dt
T
Symbol
R
R
www.irf.com
D
D
DM
AR
J,
D
GS
AS
AR
θJL
θJA
@ T
@ T
@T
T
Anti-lock Braking Systems (ABS)
Electronic Fuel Injection
Power Doors, Windows & Seats
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified
Lead-Free
STG
C
C
C
®
= 25°C
= 70°C
= 25°C
Power MOSFET's in a Dual SO-8 package utilize
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy„
Avalanche Current
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt …
Junction and Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
Parameter
Parameter
ƒ
AUTOMOTIVE MOSFET
ƒ
GS
GS
@ 4.5V
@ 4.5V
G2
G1
S2
S1
V
50V
DSS
1
2
3
4
Top View
See Fig.16c, 16d, 19, 20
Typ.
–––
–––
R
HEXFET
8
7
6
5
DS(on)
200@V
130@V
-55 to + 175
D1
D1
D2
D2
Max.
± 20
3.0
2.5
2.4
25
16
22
12
IRF7103QPbF
max (mW)
GS
GS
®
= 4.5V
Power MOSFET
= 10V
Max.
20
50
SO-8
3.0A
1.5A
mW/°C
I
Units
Units
D
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

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IRF7103TRPBF Summary of contents

Page 1

Typical Applications Anti-lock Braking Systems (ABS) l Electronic Fuel Injection l Power Doors, Windows & Seats l Benefits Advanced Process Technology l Dual N-Channel MOSFET l Ultra Low On-Resistance l 175°C Operating Temperature l Repetitive Avalanche Allowed up to Tjmax ...

Page 2

IRF7103QPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 20µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100. 175° ...

Page 4

IRF7103QPbF 10000 0V, C iss = rss = oss = 1000 Ciss Coss 100 Crss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL ...

Page 6

IRF7103QPbF 0.15 0.14 0.13 0. 3.0A 0.11 0.10 0.09 4.5 6.0 7.5 9.0 10.5 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 2.0 1.8 1.5 1.3 1.0 -75 -50 -25 0 ...

Page 7

Starting T , Junction Temperature ( C) J Fig 16a. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. 3mA ...

Page 8

IRF7103QPbF 1000 Duty Cycle = Single Pulse 100 10 0.01 1 0.05 0.10 0.1 0.01 1.0E-08 1.0E-07 1.0E-06 Fig 19. Typical Avalanche Current Vs.Pulsewidth 25 TOP Single Pulse BOTTOM 10% Duty Cycle 3. ...

Page 9

SO-8 Package Outline Dimensions are shown in millimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ...

Page 10

IRF7103QPbF SO-8 Tape and Reel TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING ...

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