IRF7103TRPBF International Rectifier, IRF7103TRPBF Datasheet

MOSFET N-CH 50V 3A 8-SOIC

IRF7103TRPBF

Manufacturer Part Number
IRF7103TRPBF
Description
MOSFET N-CH 50V 3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF7103TRPBF

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
290pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
N
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.13Ohm
Drain-source On-volt
50V
Gate-source Voltage (max)
±20V
Continuous Drain Current
3A
Power Dissipation
2W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
200 mOhms
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
20 V
Mounting Style
SMD/SMT
Gate Charge Qg
12 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7103PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7103TRPBF
Manufacturer:
IR
Quantity:
24 000
Part Number:
IRF7103TRPBF
Manufacturer:
International Rectifier
Quantity:
215 449
Part Number:
IRF7103TRPBF
Manufacturer:
ST
0
Part Number:
IRF7103TRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7103TRPBF
0
Company:
Part Number:
IRF7103TRPBF
Quantity:
80
Company:
Part Number:
IRF7103TRPBF
Quantity:
9 000
Company:
Part Number:
IRF7103TRPBF
Quantity:
56 000
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications.
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Description
Absolute Maximum Ratings
Thermal Resistance Ratings
I
I
I
P
V
dv/dt
T
D
D
DM
J,
R
D
GS
@ T
@ T
T
@T
Adavanced Process Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
JA
STG
A
A
C
= 25°C
= 70°C
= 25°C
With these improvements, multiple
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G 2
G 1
S 2
S 1
1
2
3
4
Top View
Min.
–––
HEXFET
8
6
5
7
-55 to + 150
Max.
0.016
D1
D 1
D 2
D2
± 20
3.0
2.3
2.0
4.5
10
Typ.
S O -8
–––
®
R
IRF7103
Power MOSFET
DS(on)
V
I
DSS
PD - 9.1095B
D
Max.
62.5
= 3.0A
= 0.130
= 50V
°C/W
Units
Units
W/°C
V/nS
°C
W
A
V
8/25/97

Related parts for IRF7103TRPBF

IRF7103TRPBF Summary of contents

Page 1

Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon ...

Page 2

IRF7103 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

IRF7103 ...

Page 4

IRF7103 ...

Page 5

D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 10a. Switching Time Test Circuit V DS 90% 10 Fig 10b. ...

Page 6

IRF7103 Q 10V Charge Fig 12a. Basic Gate Charge Waveform G GD Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. 3mA Current Sampling Resistors Fig ...

Page 7

Peak Diode Recovery dv/dt Test Circuit + D.U Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple * ...

Page 8

IRF7103 Package Outline SO8 Outline 0.25 (.010 0.25 (.010) ...

Page 9

Tape & Reel Information SO8 Dimensions are shown in millimeters (inches TRO SIO ...

Related keywords