MOSFET 2P-CH 20V 5.3A 8-SOIC

IRF7314TRPBF

Manufacturer Part NumberIRF7314TRPBF
DescriptionMOSFET 2P-CH 20V 5.3A 8-SOIC
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7314TRPBF datasheet
 

Specifications of IRF7314TRPBF

Fet Type2 P-Channel (Dual)Fet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs58 mOhm @ 2.9A, 4.5VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C5.3AVgs(th) (max) @ Id700mV @ 250µA
Gate Charge (qg) @ Vgs29nC @ 4.5VInput Capacitance (ciss) @ Vds780pF @ 15V
Power - Max2WMounting TypeSurface Mount
Package / Case8-SOIC (3.9mm Width)ConfigurationDual
Transistor PolarityDual P-ChannelResistance Drain-source Rds (on)98 mOhms
Drain-source Breakdown Voltage- 20 VGate-source Breakdown Voltage12 V
Continuous Drain Current- 5.3 APower Dissipation2 W
Mounting StyleSMD/SMTGate Charge Qg19 nC
Continuous Drain Current Id-5.3APower Dissipation Pd2W
No. Of Pins8Drain Source On Resistance @ 2.7v98mohm
Drain Source On Resistance @ 4.5v58mohmRohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesIRF7314PBFTR
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IRF7314TRPBF Summary of contents

  • Page 1

    Top View SO θ Ω V ...

  • Page 2

      ‚ Ω … Ω ƒ ≤ ≤ ≤ „ ≤ ≤ „ „ „ Ω Ω „ ƒ ƒ ≤ ≤ ...

  • Page 3

    VGS TOP -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V 10 -1.50V 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS 100 ° ...

  • Page 4

    I = -2.9A D 1.5 1.0 0.5 0.0 -60 -40 - 100 120 140 160 T , Junction Temperature (°C) J 0.08 0.07 0. -5.3A D 0.05 0.04 0.03 0.0 2.0 4.0 ...

  • Page 5

    1MHz iss 1200 rss oss ds gd 1000 C iss 800 C oss 600 400 ...

  • Page 6

    SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010 NOT DIMENS IONING ...

  • Page 7

    SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...