IRF7314TRPBF International Rectifier, IRF7314TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7314TRPBF
• Description: MOSFET 2P-CH 20V 5.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7314TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 780pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Resistance Drain-source Rds (on): 98 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 5.3 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Continuous Drain Current Id: -5.3A
• Power Dissipation Pd: 2W
• No. Of Pins: 8
• Drain Source On Resistance @ 2.7v: 98mohm
• Drain Source On Resistance @ 4.5v: 58mohm
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7314PBFTR

100
0.1
100
10
10
1
1
0.1
1.5
TOP
BOTTOM
-V
2.0
-V
DS
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
2.5
T = 25 C
J
3.0
°
1
T = 150 C
3.5
J
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
-1.50V
DS
= -10V
4.0
°
°
4.5
5.0
10
100
0.1
10
100
0.1
1
10
0.1
1
0.2
TOP
BOTTOM
-V
-V
DS
0.4
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
SD
, Drain-to-Source Voltage (V)
T = 150 C
,Source-to-Drain Voltage (V)
J
0.6
°
0.8
1
T = 25 C
J
20µs PULSE WIDTH
T = 150 C
J
-1.50V
1.0
°
°
V
GS
1.2
= 0 V
1.4
10