IRF7314TRPBF International Rectifier, IRF7314TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7314TRPBF
• Description: MOSFET 2P-CH 20V 5.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7314TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 780pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Resistance Drain-source Rds (on): 98 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 5.3 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Continuous Drain Current Id: -5.3A
• Power Dissipation Pd: 2W
• No. Of Pins: 8
• Drain Source On Resistance @ 2.7v: 98mohm
• Drain Source On Resistance @ 4.5v: 58mohm
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7314PBFTR

100
0.1
1400
1200
1000
10
0.00001
800
600
400
200
1
0
1
0.50
0.20
0.10
0.05
0.02
0.01
-V
DS
V
C
C
C
(THERMAL RESPONSE)
0.0001
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
SINGLE PULSE
C
C
C
= 0V,
= C
= C
= C
iss
oss
rss
gs
gd
ds
+ C
+ C
10
gd
gd
f = 1MHz
0.001
, C
ds
SHORTED
t , Rectangular Pulse Duration (sec)
1
0.01
100
A
10
8
6
4
2
0
0.1
0
I
D
= -2.9A
5
1. Duty factor D = t / t
2. Peak T = P
Q , Total Gate Charge (nC)
Notes:
G
10
1
J
V
DS
DM
15
x Z
= -16V
1
thJA
P
2
DM
+ T
20
10
A
t
1
t
2
25
30
100
A