IRF7105QTRPBF International Rectifier, IRF7105QTRPBF Datasheet

MOSFET N/P-CH DUAL 25V 8-SOIC

IRF7105QTRPBF

Manufacturer Part Number
IRF7105QTRPBF
Description
MOSFET N/P-CH DUAL 25V 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets
1.IRF7105QTRPBF.pdf (10 pages)
2.IRF7105TR.pdf (10 pages)

Specifications of IRF7105QTRPBF

Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
3.5A, 2.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
330pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
3.5A
Drain Source Voltage Vds
25V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7105QTRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7105QTRPBF
Manufacturer:
IR
Quantity:
20 000
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These HEXFET
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to
make this design an extremely efficient and reliable device
for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available
www.irf.com
θ
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
in Tape & Reel.
®
Power MOSFET's in a Dual SO-8 package

‚
„
G2
G1
S2
S1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
1
2
3
4
Top View
8
7
6
5
D1
D1
D2
D2
SO-8
DS(on)
DSS
D
Ω
Ω
1

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IRF7105QTRPBF Summary of contents

Page 1

Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free l ® These HEXFET Power MOSFET Dual SO-8 package ...

Page 2

Notes:  ‚ N-Channel I ≤ ≤ SD ≤ ≤ P-Channel Ω  ƒ „ ≤ ≤ ≤ ≤ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Ω, Ω ƒ Ω Ω ƒ ƒ ƒ ...

Page 3

www.irf.com 3 ...

Page 4

Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors 90% 10 d(on D.U. ...

Page 5

www.irf.com 5 ...

Page 6

Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ -3mA I G Current Sampling Resistors 90% 10 d(on D.U. ...

Page 7

D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 www.irf.com Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration ...

Page 8

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent 8 + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 9

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & T OLERANCING PER AS ME ...

Page 10

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

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