MOSFET P-CH DUAL 30V 4.5A 8TSSOP

IRF7751TRPBF

Manufacturer Part NumberIRF7751TRPBF
DescriptionMOSFET P-CH DUAL 30V 4.5A 8TSSOP
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7751TRPBF datasheet
 

Specifications of IRF7751TRPBF

Fet Type2 P-Channel (Dual)Fet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs35 mOhm @ 4.5A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C4.5AVgs(th) (max) @ Id2.5V @ 250µA
Gate Charge (qg) @ Vgs44nC @ 10VInput Capacitance (ciss) @ Vds1464pF @ 25V
Power - Max1WMounting TypeSurface Mount
Package / Case8-TSSOPConfigurationDual
Transistor PolarityDual P-ChannelDrain-source Breakdown Voltage- 30 V
Gate-source Breakdown Voltage20 VContinuous Drain Current- 4.5 A
Power Dissipation1 WMounting StyleSMD/SMT
Gate Charge Qg29 nCLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesIRF7751TRPBF
IRF7751TRPBFTR
  
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Ultra Low On-Resistance
l
Dual P-Channel MOSFET
l
Very Small SOIC Package
l
Low Profile (< 1.2mm)
l
Available in Tape & Reel
l
Lead-Free
l
Description
®
HEXFET
power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
signer with an extremely efficient and reliable device
for use in battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
V
Drain-Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
Pulsed Drain Current 
I
DM
P
@T
= 25°C
Power Dissipation
D
A
P
@T
= 70°C
Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
T
T
Junction and Storage Temperature Range
J,
STG
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
θJA
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V
DSS
-30V
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provides the de-
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@ -10V
GS
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PD - 96015A
IRF7751PbF
®
HEXFET
Power MOSFET
R
max
I
DS(on)
D
35mΩ@V
= -10V
-4.5A
GS
55mΩ@V
= -4.5V
-3.8A
GS
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%
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TSSOP-8
Max.
Units
-30
V
-4.5
-3.6
A
-18
1.0
0.64
0.008
W/°C
±20
V
-55 to +150
°C
Max.
Units
125
°C/W
05/14/09
1

IRF7751TRPBF Summary of contents

  • Page 1

    ... Lead-Free l Description ® HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- national Rectifier is well known for, signer with an extremely efficient and reliable device for use in battery and load management ...

  • Page 2

    Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

  • Page 3

    PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 T = 150 C ° ° ...

  • Page 4

    1MHz iss rss 3200 oss iss 2400 1600 800 C oss C ...

  • Page 5

    T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL ...

  • Page 6

    -4.5A 0.040 0.020 3.0 4.0 5.0 6.0 7.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic ...

  • Page 7

    TSSOP8 Package Outline Dimensions are shown in milimeters (inches @! @ DI9@Y 6SF $ r 7 "Y ppp r 'YÃ iii hhh 8 'ÃTVSA G@69Ã6TTDB ...

  • Page 8

    G@) UCDTÃDTÃ6IÃDSA''$! 7A GPUÃ8P9@ TSSOP-8 Tape and Reel Information A@@9Ã9DS@8UDPI 'À€ IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 6SUÃIVH7@S 96U@Ã8P9@Ã`XX  6TT@H7G`ÃTDU@Ã8P9@ Ã2ÃGrhqA…rrÃvqvph‡‚… à "Å %À€ IPU@T) ÃÃU6Q@ÃÉÃS@@GÃPVUGDI@Ã8PIAPSHTÃUPÃ@D6#' ÃÉÃ@D6$#  Data ...