IRF7751TRPBF International Rectifier, IRF7751TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7751TRPBF
• Description: MOSFET P-CH DUAL 30V 4.5A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7751TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1464pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 4.5 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 29 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7751TRPBF; IRF7751TRPBFTR

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0.01
100
0.1
100
10
0.1
10
1
Fig 1. Typical Output Characteristics
1
Fig 3. Typical Transfer Characteristics
2.0
0.1
T = 150 C
J
-V
-V DS , Drain-to-Source Voltage (V)
GS
3.0
, Gate-to-Source Voltage (V)
°
1
T = 25 C
J
-2.7V
20µs PULSE WIDTH
Tj = 25°C
4.0
°
V
20µs PULSE WIDTH
DS
10
= -15V
5.0
TOP
BOTTOM -2.7V
VGS
-10.0V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-3.0V
6.0
100
100
0.1
10
1
2.0
1.5
1.0
0.5
0.0
0.1
-60 -40 -20
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I =
D
-V DS , Drain-to-Source Voltage (V)
-4.5A
T , Junction Temperature ( C)
J
Vs. Temperature
0
1
20 40 60 80 100 120 140 160
20µs PULSE WIDTH
Tj = 150°C
-2.7V
10
TOP
BOTTOM -2.7V
V
GS
°
VGS
-10.0V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-3.0V
=
-10V
100
3