IRF7328TRPBF International Rectifier, IRF7328TRPBF Datasheet

MOSFET 2P-CH 30V 8A 8-SOIC

IRF7328TRPBF

Manufacturer Part Number
IRF7328TRPBF
Description
MOSFET 2P-CH 30V 8A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF7328TRPBF

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
78nC @ 10V
Input Capacitance (ciss) @ Vds
2675pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
P
Current, Drain
-8 A
Gate Charge, Total
52 nC
Package Type
SO-8
Polarization
Dual P-Channel
Power Dissipation
2 W
Resistance, Drain To Source On
17 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
198 ns
Time, Turn-on Delay
13 ns
Transconductance, Forward
12 S
Voltage, Breakdown, Drain To Source
-30 V
Voltage, Drain To Source
-30 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±20 V
Configuration
Dual
Transistor Polarity
Dual P-Channel
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 8 A
Mounting Style
SMD/SMT
Gate Charge Qg
52 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7328PBFTR
IRF7328TRPBF
IRF7328TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7328TRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7328TRPBF
0
Company:
Part Number:
IRF7328TRPBF
Quantity:
10 420
Description
Absolute Maximum Ratings
Thermal Resistance
New trench HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
www.irf.com
V
I
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I
P
P
T
R
ÿÿ
ÿÿ
ÿ
ÿ
ÿ
V
D
D
DM
Available in Tape & Reel
Trench Technology
Ultra Low On-Resistance
Lead-Free
J
DS
D
D
θJA
Dual P-Channel MOSFET
GS
@ T
@ T
, T
@T
@T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
device
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Linear Derating Factor
Gate-to-Source Voltage
design that HEXFET power
®
Power MOSFETs
Parameter
Parameter

GS
GS
ƒ
ƒ
ƒ
@ -10V
@ -10V
from
G2
G1
S2
S1
V
-30V
DSS
1
2
3
4
Top View
HEXFET
32mΩ@V
21mΩ@V
8
7
6
5
IRF7328PbF
-55 to + 150
R
DS(on)
D1
D1
D2
D2
Max.
Max.
62.5
-8.0
-6.4
-30
-32
2.0
1.3
± 20
16
®
GS
GS
Power MOSFET
max
= -4.5V
= -10V
SO-8
PD - 95196A
-8.0A
-6.8A
mW/°C
I
Units
Units
°C/W
D
°C
W
W
V
A
V
1
12/03/10

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IRF7328TRPBF Summary of contents

Page 1

... Lead-Free ÿ Description ® New trench HEXFET Power MOSFETs International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications ...

Page 2

IRF7328PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ° 150 ° ...

Page 4

IRF7328PbF 4000 1MHz iss rss oss ds gd 3000 C iss 2000 1000 C oss C rss ...

Page 5

T , Case Temperature ( Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE ...

Page 6

IRF7328PbF 0.060 0.050 0.040 -8.0A 0.030 0.020 0.010 0.000 3.0 4.0 5.0 6.0 7.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge ...

Page 7

SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 8

IRF7328PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES ...

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