IRF7904PBF International Rectifier, IRF7904PBF Datasheet

MOSFET N-CHAN DUAL 30V 8-SOIC

IRF7904PBF

Manufacturer Part Number
IRF7904PBF
Description
MOSFET N-CHAN DUAL 30V 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7904PBF

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16.2 mOhm @ 7.6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.6A, 11A
Vgs(th) (max) @ Id
2.25V @ 25µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Input Capacitance (ciss) @ Vds
910pF @ 15V
Power - Max
1.4W, 2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7904PBF
Manufacturer:
IR
Quantity:
30 000
Part Number:
IRF7904PBF
Manufacturer:
IR
Quantity:
20 000
Benefits
l
l
l
l
l
l
l
Applications
l
www.irf.com
V
V
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJL
θJA
and Current
@ T
@ T
Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
Very Low R
Low Gate Charge
Fully Characterized Avalanche Voltage
20V V
Improved Body Diode Reverse Recovery
100% Tested for R
Lead-Free
@T
@T
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
GS
Max. Gate Rating
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
at 4.5V V
G
GS
Parameter
Parameter
fg
g
GS
GS
@ 10V
@ 10V
B
V
B!
30V
!
!
DSS



Q1 16.2m @V
Q2 10.8m @V
Q1 Max.
Q1 Max.
0.011
7.6
6.1
1.4
0.9
61
20
90
R
IRF7904PbF




-55 to + 150
DS(on)
9
HEXFET
ÃÃ9!
ÃÃ9!
ÃÃ9!
± 20
30
max
Q2 Max.
Q2 Max.
GS
GS
0.016
62.5
8.9
2.0
1.3
11
89
20
®
= 10V
= 10V
Power MOSFET
SO-8
Units
7.6A
Units
W/°C
°C/W
11A
°C
W
V
A
I
D
07/10/06
1

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IRF7904PBF Summary of contents

Page 1

... R Junction-to-Ambient θJA www.irf.com V DSS 30V Q1 16. 10. Parameter Q1 Max. @ 10V 7 10V 6.1 GS 1.4 0.9 0.011 Q1 Max. Parameter g fg IRF7904PbF ® HEXFET Power MOSFET I R max D DS(on) = 10V 7. 10V 11A ÃÃ9!  ÃÃ9!  ÃÃ9!  SO-8 Q2 Max. Units 30 V ± 8.9 A ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Q1 - Control FET 100 10 1 2.5V ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 10 2.5V ≤ 60µs PULSE WIDTH Tj = 150°C 1 ...

Page 4

Q1 - Control FET 10000 0V MHZ C iss = SHORTED C rss = oss = 1000 Ciss ...

Page 5

Q1 - Control FET 1 7. 10V 1.0 0.5 -60 -40 - Junction Temperature (°C) Fig 13. Normalized On-Resistance vs. Temperature 100 150°C 10.0 ...

Page 6

Q1 - Control FET 100 Ambient Temperature (°C) Fig 19. Maximum Drain Current vs. Ambient Temp. 2.6 2.2 1.8 1.4 1.0 -75 -50 - ...

Page 7

D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q1) 100 D = 0.50 0.20 10 0.10 0.05 0.02 ...

Page 8

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 28 D.U 20V V GS 0.01 Ω Fig 29a. Unclamped Inductive Test Circuit V ...

Page 9

SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ...

Page 10

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

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